Surface Mount GaN Transistors

55 Surface Mount GaN Transistors from 12 Manufacturers meet your specification.

Surface Mount GaN Transistors from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Package Type : Surface Mount
Description:600 V Enhancement mode GaN power transistor
Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
14 to 31 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20-85
Applications:
Industrial, telecom, datacenter SMPS based on the ...
more info
Description:600 V Enhancement Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
14 to 31 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20-87
Applications:
Industrial, telecom, datacenter SMPS based on the ...
more info
Description:Gallium nitride CoolGaN™ 600V e-mode power transistor IGT60R070D1 for ultimate efficiency and reliability
Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
14 to 31 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8-3
Applications:
Industrial, telecom, datacenter SMPS based on the ...
more info
Description:Gallium nitride CoolGaN™ 400V enhancement-mode power transistor IGT40R070D1E8220 for ultimate efficiency and reliability
Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
400 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
14 to 31 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
4.5 nC
Input Capacitance:
382 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
11 ns
Rise Time:
7.5 ns
Fall Time:
9 ns
Temperature operating range:
0 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Class-D Audio Amplifier
more info
Description:Gallium nitride CoolGaN™ 600V enhancement mode power transistor IGT60R190D1S for ultimate efficiency and reliability
Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
190 milli-ohm
Continous Drain Current:
5.5 to 12.5 A
Pulsed Drain Current:
13.5 to 23 A
Total Charge:
3.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
12 ns
Rise Time:
5 ns
Fall Time:
12 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8-3
Applications:
Consumer SMPS and high density chargers based on t...
more info
Description:Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R070D1 for ultimate efficiency and reliability
Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8-1
Applications:
Industrial, telecom, datacenter SMPS based on the ...
more info
Description:Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R190D1 for ultimate efficiency and reliability
Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
190 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
13.5 to 23 A
Total Charge:
3.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
12 ns
Rise Time:
5 ns
Fall Time:
12 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8-1
Applications:
Consumer SMPS and high density chargers based on t...
more info
Description:650V 72mΩ GaN FET in PQFN88
Configuration:
Single
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
72 to 148 milli-ohm
Continous Drain Current:
16 to 25 A
Pulsed Drain Current:
120 A
Total Charge:
9.3 nc
Input Capacitance:
600 pF
Output Capacitance:
88 pF
Turn-on Delay Time:
29 ns
Turn-off Delay Time:
45 ns
Rise Time:
7.5 ns
Fall Time:
8.2 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PQFN
Applications:
Datacom, Broad industrial, PV inverter, Servo moto...
Dimensions:
8 x 8 mm
more info
Description:650 V GaN Power Transistor for Industrial Applications
Configuration:
Single
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
72 to 148 milli-ohm
Continous Drain Current:
16 to 25 A
Pulsed Drain Current:
120 A
Total Charge:
9.3 nc
Input Capacitance:
600 pF
Output Capacitance:
88 pF
Turn-on Delay Time:
29 ns
Turn-off Delay Time:
45 ns
Rise Time:
7.5 ns
Fall Time:
8.2 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PQFN
Applications:
Datacom, Broad industrial, PV inverter, Servo moto...
Dimensions:
8 x 8 mm
more info
Description:650V 150mΩ GaN FET in PQFN88
Configuration:
Single
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
150 to 307 milli-ohm
Continous Drain Current:
9.5 to 15 A
Pulsed Drain Current:
60 A
Total Charge:
8.2 nc
Input Capacitance:
576 pF
Output Capacitance:
36 pF
Turn-on Delay Time:
27 ns
Turn-off Delay Time:
55 ns
Rise Time:
5.5 ns
Fall Time:
9.3 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PQFN
Applications:
Datacom, Broad industrial, PV inverter, Servo moto...
Dimensions:
8 x 8 mm
more info

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Pulsed Drain Current (A)

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Total Charge (nC)

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Qualification

RoHS Compliant

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