Through Hole GaN Transistors

48 Through Hole GaN Transistors from 6 Manufacturers meet your specification.

Through Hole GaN Transistors from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Package Type : Through Hole
Description:1200 V, 58 to 119 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.2 to 4.7 V
Drain Source Voltage:
1200 V
Drain Source Resistance:
58 to 119 milli-ohm
Continous Drain Current:
28 A
Pulsed Drain Current:
78 A
Total Charge:
15 nC
Input Capacitance:
930 pF
Output Capacitance:
84 pF
Turn-on Delay Time:
57.6 ns
Turn-off Delay Time:
83.2 ns
Rise Time:
10.8 ns
Fall Time:
12.8 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO -247
Applications:
Datacom, Broad industrial, PV inverter, Servo moto...
more info
Description:700 V, 30 to 72 milli-ohm, 46 A GaN Transistor
Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
3.3 to 48 V
Drain Source Voltage:
700 V
Drain Source Resistance:
30 to 72 milli-ohm
Continous Drain Current:
46 A
Pulsed Drain Current:
240 A
Total Charge:
24 to 36 nC
Input Capacitance:
1500 pF
Output Capacitance:
190 pF
Turn-on Delay Time:
69 ns
Turn-off Delay Time:
99 ns
Rise Time:
14 ns
Fall Time:
12 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
Description:900 V, 160 to 350 milli-ohm, 15 A GaN Transistor
Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
900 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 to 18 nC
Input Capacitance:
1400 pF
Output Capacitance:
120 pF
Turn-on Delay Time:
70 ns
Turn-off Delay Time:
150 ns
Rise Time:
48 ns
Fall Time:
18 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
Description:650 V, 92 to 184 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.2 to 4.1 V
Drain Source Voltage:
650 V
Drain Source Resistance:
92 to 184 milli-ohm
Continous Drain Current:
18.9 A
Pulsed Drain Current:
95 A
Total Charge:
14.4 nC
Input Capacitance:
818 pF
Output Capacitance:
53 pF
Turn-on Delay Time:
23 ns
Turn-off Delay Time:
58 ns
Rise Time:
7.1 ns
Fall Time:
7.5 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220
Applications:
Consumer, Power adapters, Low power SMPS, Lighting
more info
Description:1000 V, 160 to 350 milli-ohm, 15 A GaN Transistor
Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
1.6 to 2.6 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 nC
Input Capacitance:
780 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
26 ns
Turn-off Delay Time:
40 ns
Rise Time:
5 ns
Fall Time:
7.4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254Z
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
Description:650 V, 110 to 230 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 3 V
Drain Source Voltage:
650 V
Drain Source Resistance:
110 to 230 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
75 A
Total Charge:
7.2 nC
Input Capacitance:
243 pF
Output Capacitance:
34 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
7 ns
Rise Time:
17 ns
Fall Time:
15 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220
Applications:
Fast charger, Renewable energy, Telecom and data-c...
more info
Description:650 V, 35 to 84 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Automotive, Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
35 to 84 milli-ohm
Continous Drain Current:
47.2 A
Pulsed Drain Current:
240 A
Total Charge:
22 nC
Input Capacitance:
1500 pF
Output Capacitance:
147 pF
Turn-on Delay Time:
60 ns
Turn-off Delay Time:
94 ns
Rise Time:
10 ns
Fall Time:
10 ns
Temperature operating range:
-55 to 175 Degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247
Applications:
Datacom, Broad industrial, PV inverter, Servo moto...
more info
Description:100 V, 8 to 10 milli-ohm, 48 A GaN Transistor
Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
8 to 10 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
340 A
Total Charge:
12 to 15 nC
Input Capacitance:
1270 to 1530 pF
Output Capacitance:
800 to 1200 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
Description:650 V, 50 to 105 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 105 milli-ohm
Continous Drain Current:
35 A
Pulsed Drain Current:
150 A
Total Charge:
24 nC
Input Capacitance:
1000 pF
Output Capacitance:
110 pF
Turn-on Delay Time:
40 ns
Turn-off Delay Time:
40 ns
Rise Time:
5 ns
Fall Time:
8 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247
Applications:
Datacom, Broad industrial, PV inverter, Servo moto...
more info
Description:650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
Configuration:
Single
Gate Threshold Voltage:
2.2 to 4.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
35 to 41 milli-ohm
Continous Drain Current:
33.4 to 47.2 A
Total Charge:
22 nc
Input Capacitance:
1500 pF
Output Capacitance:
147 pF
Turn-on Delay Time:
14 ns
Turn-off Delay Time:
36 ns
Rise Time:
14 ns
Fall Time:
17 ns
Temperature operating range:
-55 to +175 °C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247
Applications:
Hard and soft switching converters for industrial ...
Dimensions:
20.45 x 15.6 x 4.95 mm
more info

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