AEC-Q101 Qualified GaN Transistors

13 AEC-Q101 Qualified GaN Transistors from 3 Manufacturers meet your specification.

AEC-Q101 Qualified GaN Transistors from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Qualification : AEC-Q101
Description:650 V, 35 to 84 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Automotive, Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
35 to 84 milli-ohm
Continous Drain Current:
47.2 A
Pulsed Drain Current:
240 A
Total Charge:
22 nC
Input Capacitance:
1500 pF
Output Capacitance:
147 pF
Turn-on Delay Time:
60 ns
Turn-off Delay Time:
94 ns
Rise Time:
10 ns
Fall Time:
10 ns
Temperature operating range:
-55 to 175 Degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247
Applications:
Datacom, Broad industrial, PV inverter, Servo moto...
more info
Description:AEC-Q100 Qualified GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
4 V
Drain Source Voltage:
650 V
Drain Source Resistance:
33 milli-ohm
Continous Drain Current:
60 A
Total Charge:
30 nc
Input Capacitance:
1500 pF
Output Capacitance:
147 pF
Temperature operating range:
-55 to +175 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
CCPAK
Applications:
Hard and soft switching converters for industrial ...
Dimensions:
12 x 12 x 2.5 mm
more info
Description:AEC-Q101 Qualified Enhancement Mode Power Transistor
Configuration:
Single
Industry:
Automotive, Industrial
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
80 V
Drain Source Resistance:
8 milli-ohm
Continous Drain Current:
8.2 A
Pulsed Drain Current:
75 A
Total Charge:
3.5 nC
Input Capacitance:
440 pF
Output Capacitance:
190 pF
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Automotive Lidar/TOF, 48 V Servers, Pulsed Power, ...
Dimensions:
1.5 x 1.5 mm
more info
Description:80 V N-Channel Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Automotive
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
80 V
Drain Source Resistance:
3.2 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
231 A
Total Charge:
10.5 nC
Input Capacitance:
1189 pF
Output Capacitance:
562 pF
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Applications:
DC-DC Converters, BLDC Motor Drives, Sync Rectific...
Dimensions:
3.5 x 1.95 mm
more info
Description:80 V N-Channel Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Automotive
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
80 V
Drain Source Resistance:
6 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
125 A
Total Charge:
5.7 nC
Input Capacitance:
644 pF
Output Capacitance:
304 pF
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Applications:
DC-DC Converters, Isolated DC-DC Converters, Autom...
Dimensions:
2.5 x 1.5 mm
more info
Description:100 V GaN Power Transistor for Multi-Channel Lidar Applications
Configuration:
Dual
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
58 milliohms
Continous Drain Current:
5 A
Pulsed Drain Current:
20 A
Total Charge:
0.8 to 1.2 nC
Input Capacitance:
94 to 150 pF
Output Capacitance:
63 to 72 pF
Temperature operating range:
-40 to 150 degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Automotive, High Frequency DC-DC Conversion, Synch...
Dimensions:
1.35 x 1.35 mm
more info
Description:650 V Automotive Qualified GaN Field Effect Transistor
Configuration:
Single
Industry:
Automotive, Industrial
Gate Threshold Voltage:
4 V
Drain Source Voltage:
650 V
Drain Source Resistance:
60 milli-ohm
Continous Drain Current:
36 A
Pulsed Drain Current:
150 A
Total Charge:
15 to 24 nc
Input Capacitance:
1000 pF
Output Capacitance:
130 pF
Turn-on Delay Time:
57 ns
Turn-off Delay Time:
88 ns
Rise Time:
10 ns
Fall Time:
11 ns
Temperature operating range:
-55 to +175 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247
Applications:
Automotive, Datacom, Broad industrial, PV inverter
Dimensions:
15.72 x 40.22 mm
more info
Description:80 V Enhancement-Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
12 to 17 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
75 A
Total Charge:
3.2 to 4 nC
Input Capacitance:
345 to 415 pF
Output Capacitance:
230 to 345 pF
Temperature operating range:
-40 to +150 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
Lidar/Pulsed Power Applications, High Power Densit...
Dimensions:
2.1 x 1.6 mm
more info
Description:80 V Enhancement-Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
53 to 80 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
17 A
Total Charge:
670 to 830 nC
Input Capacitance:
73 to 88 pF
Output Capacitance:
47 to 71 pF
Temperature operating range:
-40 to +150 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Lidar/pulsed power applications, High power densit...
Dimensions:
0.9 x 0.9 mm
more info
Description:65 V Enhancement-Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
65 V
Drain Source Resistance:
1700 to 3300 milli-ohm
Continous Drain Current:
0.5 A
Pulsed Drain Current:
0.5 A
Total Charge:
49 to 64 nC
Input Capacitance:
7 to 10 pF
Output Capacitance:
2 to 3 pF
Temperature operating range:
-40 to +150 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Lidar/pulsed power applications, High speed gate d...
Dimensions:
0.9 x 0.9 mm
more info

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