Industrial GaN Transistors - Page 11

254 Industrial GaN Transistors from 21 Manufacturers meet your specification.
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  • Industry : Industrial
Description:650 V, 50 to 105 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 105 milli-ohm
Continous Drain Current:
35 A
Pulsed Drain Current:
150 A
Total Charge:
24 nC
Input Capacitance:
1000 pF
Output Capacitance:
110 pF
Turn-on Delay Time:
40 ns
Turn-off Delay Time:
40 ns
Rise Time:
5 ns
Fall Time:
8 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247
Applications:
Datacom, Broad industrial, PV inverter, Servo moto...
more info
Description:100 V Enhancement Mode GaN FET for Telecom Applications
Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
3.2 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
230 A
Total Charge:
9.2 nC
Input Capacitance:
1000 pF
Output Capacitance:
460 pF
Temperature operating range:
-40 to 150 Degree C
Package Type:
wafer
Package:
WLCSP8
Applications:
High power density and high efficiency power conve...
Dimensions:
3.5 mm x 2.13 mm
more info
Description:40 V Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.3 milli-ohm
Continous Drain Current:
69 A
Pulsed Drain Current:
409 A
Total Charge:
17.1 nC
Input Capacitance:
2178 pF
Output Capacitance:
1071 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High frequency DC-DC Converters, BLDC Motor Drives...
Dimensions:
2.85 x 3.25 mm
more info
Description:650 V, 10 milli-ohm, GaN Transistor
Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
10 milli-ohm
Continous Drain Current:
150 A
Total Charge:
33 nC
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, AC-DC Converters...
Dimensions:
12.6 x 5.6 mm
more info
Description:650 V, 180 to 440 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
180 to 440 milli-ohm
Continous Drain Current:
6.5 to 10 A
Pulsed Drain Current:
15 A
Total Charge:
1.5 nC
Input Capacitance:
55 pF
Output Capacitance:
18 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
12 ns
Rise Time:
10 ns
Fall Time:
5 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
5.7 x 0.8 mm
more info
Description:100 V, 1.4 to 1.8 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
1.4 to 1.8 milli-ohm
Continous Drain Current:
100 A
Pulsed Drain Current:
320 A
Total Charge:
22 nC
Input Capacitance:
2500 pF
Output Capacitance:
1100 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FCQFN
Applications:
High frequency DC-DC converter, Point of Load, RF ...
Dimensions:
4 x 6 mm
more info
Description:650 V GaN Power Transistor for Solar Micro-Inverter Applications
Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
125 milli-ohm
Continous Drain Current:
12 A
Pulsed Drain Current:
24 A
Total Charge:
27 nC
Output Capacitance:
27 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
6 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
6 x 8 mm
more info
Description:650 V, 130 to 350 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.2 to 4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
130 to 350 milli-ohm
Continous Drain Current:
12 A
Total Charge:
1.9 nC
Output Capacitance:
24 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
8 ns
Rise Time:
6 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Mobile charge...
Dimensions:
8 x 8 mm
more info
Description:650 V, 900 to 1900 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
900 to 1900 milli-ohm
Continous Drain Current:
3.6 A
Pulsed Drain Current:
5 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
5.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
Adapter, Renewable energy, Telecom and data-com, S...
more info
Description:650 V, 29 to 70 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
29 to 70 milli-ohm
Continous Drain Current:
30 A
Total Charge:
5.8 nC
Input Capacitance:
241 pF
Output Capacitance:
61 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
15 ns
Rise Time:
12 ns
Fall Time:
13 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Adapters, Quick Char...
Dimensions:
8 x 8 mm
more info

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