GaN Power Transistors - Page 3

21 GaN Power Transistors from 2 Manufacturers meet your specification.
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  • Industry : Industrial
  • Manufacturers : Nexperia, Xindao Electronic Technology
Description:650 V, 270 to 570 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
270 to 570 milli-ohm
Continous Drain Current:
7.9 A
Pulsed Drain Current:
14 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
5.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220F
Applications:
Fast charger, Renewable energy, Telecom and data-c...
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