Industrial GaN Transistors - Page 4

254 Industrial GaN Transistors from 21 Manufacturers meet your specification.
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  • Industry : Industrial
Description:650 V, 22 milli-ohm, GaN Transistor
Industry:
Automotive, Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
22 milli-ohm
Continous Drain Current:
65 A
Total Charge:
41 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMD
Applications:
Solar Inverter, AC-DC Power Supply, AC motor, Batt...
Dimensions:
15 x 18 x 3 mm
more info
Description:650 V, 240 to 640 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.2 to 4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
240 to 640 milli-ohm
Continous Drain Current:
7 A
Total Charge:
1.2 nC
Output Capacitance:
11 pF
Turn-on Delay Time:
5 ns
Turn-off Delay Time:
13 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Mobile charge...
Dimensions:
5 x 6 mm
more info
Description:650 V, 195 to 380 milli-ohm, GaN Transistor
Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
195 to 380 milli-ohm
Continous Drain Current:
9 A
Total Charge:
1.9 nC
Input Capacitance:
53.5 pF
Output Capacitance:
13.3 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
High efficiency power conversion, High density pow...
Dimensions:
6 x 8 mm
more info
Description:650 V, 56 to 120 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
56 to 120 milli-ohm
Continous Drain Current:
17.1 to 38.3 A
Pulsed Drain Current:
54.4 to 121.6 A
Total Charge:
5.02 nC
Input Capacitance:
155.3 pF
Output Capacitance:
38.3 pF
Turn-on Delay Time:
3.36 ns
Turn-off Delay Time:
8.76 ns
Rise Time:
3.9 ns
Fall Time:
5.6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
Description:700 V, 30 to 72 milli-ohm, 46 A GaN Transistor
Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
3.3 to 48 V
Drain Source Voltage:
700 V
Drain Source Resistance:
30 to 72 milli-ohm
Continous Drain Current:
46 A
Pulsed Drain Current:
240 A
Total Charge:
24 to 36 nC
Input Capacitance:
1500 pF
Output Capacitance:
190 pF
Turn-on Delay Time:
69 ns
Turn-off Delay Time:
99 ns
Rise Time:
14 ns
Fall Time:
12 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
Description:650 V, 600 to 1260 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
600 to 1260 milli-ohm
Continous Drain Current:
4.8 A
Pulsed Drain Current:
8 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
5.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
Adapter, Renewable energy, Telecom and data-com, S...
more info
Description:650 V, 170 to 190 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
170 to 190 milli-ohm
Continous Drain Current:
8 A
Total Charge:
2.1 nC
Input Capacitance:
63 pF
Output Capacitance:
18 pF
Turn-on Delay Time:
9 ns
Turn-off Delay Time:
8 ns
Rise Time:
11 ns
Fall Time:
15 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Adapters, Quick Char...
Dimensions:
6 x 8 mm
more info
Description:600 V, 140 to 260 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
10.6 A
Pulsed Drain Current:
23 A
Total Charge:
2.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-21
Applications:
Charger and Adaptors, Server, Telecom & Networking...
Dimensions:
8 x 8 mm
more info
Description:650 V GaN Field Effect Transistor for SMPS Applications
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.65 V
Drain Source Voltage:
650 V
Drain Source Resistance:
92 milli-ohm
Continous Drain Current:
18.9 A
Pulsed Drain Current:
95 A
Total Charge:
14.4 nC
Input Capacitance:
818 pF
Output Capacitance:
53 pF
Turn-on Delay Time:
23 ns
Turn-off Delay Time:
58 ns
Rise Time:
7.1 ns
Fall Time:
7.5 ns
Temperature operating range:
-55 to 150 Degree C
Qualification:
JEDEC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PQFN
Applications:
Consumer, Power adapters, Low power SMPS, Lighting
Dimensions:
8 x 8 mm
more info
Description:150 V, 5.6 to 7 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 12.1 V
Drain Source Voltage:
150 V
Drain Source Resistance:
5.6 to 7 milli-ohm
Continous Drain Current:
28 A
Pulsed Drain Current:
120 A
Total Charge:
7.6 nC
Input Capacitance:
865 pF
Output Capacitance:
280 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SOT8073-1
Applications:
High power density and high efficiency power conve...
Dimensions:
3.2 x 2.2 x 0.774 mm
more info

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