Industrial GaN Transistors - Page 7

254 Industrial GaN Transistors from 21 Manufacturers meet your specification.
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  • Industry : Industrial
Description:100 V, 5.2 to 6 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.2 to 6 milli-ohm
Continous Drain Current:
74 A
Pulsed Drain Current:
345 A
Total Charge:
11.7 nC
Input Capacitance:
1240 pF
Output Capacitance:
740 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-D
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8 x 5.6 mm
more info
Description:100 V Enhancement Mode GaN-on-Silicon Power Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.5 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
125 A
Total Charge:
4.5 nC
Input Capacitance:
485 pF
Output Capacitance:
220 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
WLCSP
Applications:
Synchronous rectification, Class-D audio, High fre...
Dimensions:
2.5 x 1.5 mm
more info
Description:800 V, 8 A, Single GaN Transistor
Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
175 to 362 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
12 to 16 A
Total Charge:
16 nC
Output Capacitance:
18 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
6 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
6 x 8 mm
more info
Description:150 V N-Channel Enhancement Mode GaN Transistor
Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
8 V
Drain Source Voltage:
150 V
Drain Source Resistance:
40 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
50 A
Total Charge:
2 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Half Bridge topologies, Synchronous Buck or Boost,...
Dimensions:
5.0 x 6.0 x 1.0 mm
more info
Description:650 V, 11 to 60 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 ns
Turn-off Delay Time:
14.9 ns
Rise Time:
12.4 ns
Fall Time:
22 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
9 x 7.6 x 0.54 mm
more info
Description:650 V, 245 to 500 milli-ohm, GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
245 to 500 milli-ohm
Continous Drain Current:
6 to 9 A
Pulsed Drain Current:
31 A
Total Charge:
22 nC
Input Capacitance:
500 pF
Output Capacitance:
20 pF
Turn-on Delay Time:
20 ns
Turn-off Delay Time:
80 ns
Rise Time:
7 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Battery Chargers, Power Adapters, LED Lighting, AC...
Dimensions:
8 x 8 mm
more info
Description:650 V, 200 to 530 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.2 to 4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
200 to 530 milli-ohm
Continous Drain Current:
8.5 A
Total Charge:
1.4 nC
Output Capacitance:
14 pF
Turn-on Delay Time:
5 ns
Turn-off Delay Time:
13 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Mobile charge...
Dimensions:
5 x 6 mm
more info
Description:650 V, 195 to 380 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
195 to 380 milli-ohm
Continous Drain Current:
8 A
Total Charge:
2.75 nC
Input Capacitance:
96.8 pF
Output Capacitance:
21.9 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
High efficiency power conversion, High density pow...
Dimensions:
8 x 8 mm
more info
Description:650 V, 64 to 162.5 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
64 to 162.5 milli-ohm
Continous Drain Current:
9.5 to 21.3 A
Pulsed Drain Current:
30.1 to 67.2 A
Total Charge:
5.38 nC
Input Capacitance:
199.9 pF
Output Capacitance:
49.4 pF
Turn-on Delay Time:
2.34 ns
Turn-off Delay Time:
10.46 ns
Rise Time:
3.35 ns
Fall Time:
6.11 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
Description:1000 V, 160 to 350 milli-ohm, 15 A GaN Transistor
Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
1.6 to 2.6 V
Drain Source Voltage:
1000 V
Drain Source Resistance:
160 to 350 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
58 A
Total Charge:
10 nC
Input Capacitance:
780 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
26 ns
Turn-off Delay Time:
40 ns
Rise Time:
5 ns
Fall Time:
7.4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254Z
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info

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