Industrial GaN Transistors - Page 9

254 Industrial GaN Transistors from 21 Manufacturers meet your specification.
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  • Industry : Industrial
Description:800 V, 5 A, Single GaN Transistor
Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
300 to 621 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
7.5 to 10 A
Total Charge:
10 nC
Output Capacitance:
11 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
8 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
6 x 8 mm
more info
Description:150 V, 80 A, GaN Transistor
Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
8 V
Drain Source Voltage:
150 V
Drain Source Resistance:
7 milli-ohm
Continous Drain Current:
80 A
Total Charge:
10.2 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Dimensions:
5.0 x 6.0 x 1.0 mm
more info
Description:650 V, 50 to 150 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 150 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
60 A
Total Charge:
6.1 nC
Input Capacitance:
242 pF
Output Capacitance:
65 pF
Turn-on Delay Time:
4.3 ns
Turn-off Delay Time:
8.2 ns
Rise Time:
4.9 ns
Fall Time:
5.2 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.1 x 8.5 x 0.56 mm
more info
Description:650 V, 130 to 350 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.2 to 4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
130 to 350 milli-ohm
Continous Drain Current:
12 A
Total Charge:
2.3 nC
Output Capacitance:
25 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
20 ns
Rise Time:
6 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Server power ...
Dimensions:
5 x 6 mm
more info
Description:650 V, 122 to 302 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
122 to 302 milli-ohm
Continous Drain Current:
6.6 to 14.7 A
Pulsed Drain Current:
20.7 to 46.3 A
Total Charge:
2.65 nC
Input Capacitance:
111.84 pF
Output Capacitance:
19.05 pF
Turn-on Delay Time:
1.88 ns
Turn-off Delay Time:
6.7 ns
Rise Time:
3.16 ns
Fall Time:
5.39 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
Description:100 V, 5.5 to 6 milli-ohm, 48 A GaN Transistor
Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.5 to 6 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
340 A
Total Charge:
12 to 15 nC
Input Capacitance:
1270 to 1530 pF
Output Capacitance:
800 to 1200 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SMG
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
Description:650 V, 160 to 330 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.8 to 3.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
160 to 330 milli-ohm
Continous Drain Current:
13 A
Pulsed Drain Current:
17 A
Total Charge:
2.2 nC
Input Capacitance:
66 pF
Output Capacitance:
26 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
Dimensions:
8 x 8 mm
more info
Description:650 V, 235 to 580 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
235 to 580 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
11 A
Total Charge:
1.6 nC
Input Capacitance:
39 pF
Output Capacitance:
11.8 pF
Turn-on Delay Time:
5 ns
Turn-off Delay Time:
16 ns
Rise Time:
10 ns
Fall Time:
11 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Server and Telecom P...
Dimensions:
5 x 6 mm
more info
Description:600 V, 200 to 360 milli-ohm GaN Transistor
Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
200 to 360 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
14.1 A
Total Charge:
1.5 nC
Input Capacitance:
100 pF
Output Capacitance:
19 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Charger and adapters, Server, telecom & networking...
Dimensions:
8 x 8 mm
more info
Description:650 V, 35 to 84 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Automotive, Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
35 to 84 milli-ohm
Continous Drain Current:
47.2 A
Pulsed Drain Current:
240 A
Total Charge:
22 nC
Input Capacitance:
1500 pF
Output Capacitance:
147 pF
Turn-on Delay Time:
60 ns
Turn-off Delay Time:
94 ns
Rise Time:
10 ns
Fall Time:
10 ns
Temperature operating range:
-55 to 175 Degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247
Applications:
Datacom, Broad industrial, PV inverter, Servo moto...
more info

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