Junction Field Effect Transistors (JFETs) - Navitas Semiconductor

11 Junction Field Effect Transistors (JFETs) from Navitas Semiconductor meet your specification.

Junction Field Effect Transistors (JFETs) from Navitas Semiconductor are listed on everything PE. We have compiled a list of Junction Field Effect Transistors (JFETs) from the Navitas Semiconductor website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Navitas Semiconductor and their distributors in your region.

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  • Manufacturers : Navitas Semiconductor
Description:1200 V, 0.25 A, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
5 to 15 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
0.18 to 0.368 Ohm
Power Dissipation:
10 to 106 W
Gate Charge:
27 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Surface Mount
Package:
TO-263-7L
more info
Description:1700 V, 1.5 A, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
0.23 to 0.56 Ohm
Power Dissipation:
48 W
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Through Hole
Package:
TO-247AB
more info
Description:1200 V, 1.3 A, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
10 to 25 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
0.1 to 0.175 Ohm
Power Dissipation:
22 to 170 W
Gate Charge:
67 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Surface Mount
Package:
TO-263-7L
more info
Description:1200 V, 1.3 A, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
10 to 25 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
0.1 to 0.175 Ohm
Power Dissipation:
22 to 170 W
Gate Charge:
65 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Surface Mount
Package:
TO-263-7L
more info
Description:1200 V, 1.3 A, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
20 to 45 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
0.05 to 0.095 Ohm
Power Dissipation:
56 to 282 W
Gate Charge:
104 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Surface Mount
Package:
TO-263-7L
more info
Description:1200 V, 1.3 A, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
20 to 45 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
0.05 to 0.095 Ohm
Power Dissipation:
56 to 282 W
Gate Charge:
105 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Surface Mount
Package:
TO-263-7L
more info
Description:1200 V, 3.5 A, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
50 to 100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
0.02 to 0.035 Ohm
Power Dissipation:
116 to 583 W
Gate Charge:
245 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Through Hole
Package:
TO-247
more info
Description:1200 V, 0.1 A, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
1.5 Ohm
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Through Hole
Package:
TO-247
more info
Description:1200 V, 0.1 A, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
1.5 Ohm
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Through Hole
Package:
TO-263-7L
more info
Description:1700 V, 0.1 A, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
1.5 Ohm
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Through Hole
Package:
TO-247
more info

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