Junction Field Effect Transistors (JFETs) - Qorvo

7 Junction Field Effect Transistors (JFETs) from Qorvo meet your specification.

Junction Field Effect Transistors (JFETs) from Qorvo are listed on everything PE. We have compiled a list of Junction Field Effect Transistors (JFETs) from the Qorvo website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Qorvo and their distributors in your region.

Selected Filters Reset All
  • Manufacturers : Qorvo
Description:1200 V Junction Field Effect Transistor for SMPS Applications
Industry:
Industrial, Commercial
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Threshold Voltage:
-11.5 V
Continous Drain Current:
63 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
35 milli-ohms
Power Dissipation:
429 W
Gate Charge:
235 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Through Hole
Package:
TO-247-3L
more info
Description:SiC Junction Field Effect Transistor for DC-AC Inverter Applications
Industry:
Industrial, Commercial
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Threshold Voltage:
-11.5 V
Continous Drain Current:
85 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
22 milli-ohms
Power Dissipation:
441 W
Gate Charge:
240 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Through Hole
Package:
TO-247-3L
more info
Description:650 V SiC Field Effect Transistor for SMPS Applications
Industry:
Industrial, Commercial
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Threshold Voltage:
-11.5 V
Continous Drain Current:
32 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
80 milli-ohms
Power Dissipation:
190 W
Gate Charge:
75 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Through Hole
Package:
TO-247-3L
more info
Description:254 W, SiC, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Threshold Voltage:
-9.3 to -4.7 V
Continous Drain Current:
25 to 34 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
0.055 to 0.142 Ohm
Power Dissipation:
254 W
Gate Charge:
114 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Through Hole
Package:
TO-247-3L
more info
Description:254 W, SiC, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Threshold Voltage:
-14 to -6 V
Continous Drain Current:
24.5 to 33.5 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
0.063 to 0.154 Ohm
Power Dissipation:
254 W
Gate Charge:
116 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Through Hole
Package:
TO-247-3L
more info
Description:68 W, SiC, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Threshold Voltage:
-11.3 to -6.7 V
Continous Drain Current:
5.1 to 6.8 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
0.35 to 1.04 Ohm
Power Dissipation:
68 W
Gate Charge:
30 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Surface Mount
Package:
DPAK-7L
more info
Description:750 V Automotive Qualified SiC FET Transistor
Industry:
Electric Vehicle
Technology:
SiC
Gate Source Voltage:
-20 to 20 V
Gate Source Threshold Voltage:
4.5 V
Continous Drain Current:
106 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
9 milli-ohms
Power Dissipation:
375 W
Gate Charge:
75 nC
RoHS Compliant:
Yes
Qualification:
AEC-Q101
Operating Temperature:
-55 to 175 Degree C
Package Type:
Surface Mount
Package:
D2PAK-7L
more info

FiltersReset All

Industry

Type

Technology

Transistor Polarity

Number of Channel

Gate Source Voltage (V)

Drain Source Breakdown Voltage (V)

Drain Source Resistance (Ohms)

Power Dissipation (W)

Qualification

RoHS Compliant

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.