Junction Field Effect Transistors (JFETs) - Toshiba

6 Junction Field Effect Transistors (JFETs) from Toshiba meet your specification.

Junction Field Effect Transistors (JFETs) from Toshiba are listed on everything PE. We have compiled a list of Junction Field Effect Transistors (JFETs) from the Toshiba website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Toshiba and their distributors in your region.

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  • Manufacturers : Toshiba
Description:0.1 W, 10 mA, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-30 V
Continous Drain Current:
1.2 to 14.0 mA
Power Dissipation:
0.1 W
Operating Temperature:
-55 to 125 Degree C
Package Type:
Surface Mount
Package:
SOT-323
more info
Description:0.3 W, 10 mA, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-30 V
Continous Drain Current:
1.2 to 14.0 mA
Power Dissipation:
0.3 W
Operating Temperature:
-55 to 125 Degree C
Package Type:
Surface Mount
Package:
SOT-25
more info
Description:0.2 W, 10 mA, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-30 V
Continous Drain Current:
1.2 to 14.0 mA
Power Dissipation:
0.2 W
Operating Temperature:
-55 to 125 Degree C
Package Type:
Surface Mount
Package:
SOT-353
more info
Description:0.15 W, 10 mA, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-30 V
Continous Drain Current:
1.2 to 14.0 mA
Power Dissipation:
0.15 W
Operating Temperature:
-55 to 125 Degree C
Package Type:
Surface Mount
Package:
SOT-346
more info
Description:0.1 W, 10 mA, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-30 V
Continous Drain Current:
0.3 to 6.5 mA
Power Dissipation:
0.1 W
Operating Temperature:
-55 to 125 Degree C
Package Type:
Surface Mount
Package:
SOT-346
more info
Description:0.1 W, 10 mA, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-30 V
Continous Drain Current:
0.3 to 6.5 mA
Power Dissipation:
0.1 W
Operating Temperature:
-55 to 125 Degree C
Package Type:
Surface Mount
Package:
SOT-323
more info

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Type

Technology

Transistor Polarity

Number of Channel

Gate Source Voltage (V)

Drain Source Breakdown Voltage (V)

Drain Source Resistance (Ohms)

Power Dissipation (W)

Qualification

RoHS Compliant

Package Type

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