Junction Field Effect Transistors (JFETs) - NTE Electronics

22 Junction Field Effect Transistors (JFETs) from NTE Electronics meet your specification.

Junction Field Effect Transistors (JFETs) from NTE Electronics are listed on everything PE. We have compiled a list of Junction Field Effect Transistors (JFETs) from the NTE Electronics website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to NTE Electronics and their distributors in your region.

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  • Manufacturers : NTE Electronics
Description:35 V N-Channel SiC Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
35 V
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
35 V
Drain Source Resistance:
100 Ohm
Power Dissipation:
0.625 W
RoHS Compliant:
Yes
Operating Temperature:
-55 to 150 Degree C
Package Type:
Through Hole
Package:
TO-92
more info
Description:0.36 W, -50 mA, Silicon P-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channel:
Single
Gate Source Voltage:
30 V
Continous Drain Current:
-2 to -15 mA
Power Dissipation:
0.36 W
Operating Temperature:
-55 to 135 Degree C
Package Type:
Through Hole
Package:
TO-92
more info
Description:0.35 W, 25 V, 10 mA, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
25 V
Continous Drain Current:
24 to 60 mA
Drain Source Breakdown Voltage:
25 V
Power Dissipation:
0.35 W
Operating Temperature:
-65 to 125 Degree C
Package Type:
Through Hole
Package:
TO-92
more info
Description:1.8 W, 50 mA, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-40 V
Drain Source Resistance:
100 Ohm
Power Dissipation:
1.8 W
Operating Temperature:
-55 to 200 Degree C
Package Type:
Through Hole
Package:
TO-18
more info
Description:0.1 W, 20 V, 10 mA, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
10 mA
Drain Source Breakdown Voltage:
20 V
Power Dissipation:
0.1 W
Operating Temperature:
-55 to 125 Degree C
Package Type:
Through Hole
Package:
TO-92
more info
Description:0.35 W, 50 mA, Silicon P-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channel:
Single
Gate Source Voltage:
30 V
Drain Source Resistance:
85 Ohm
Power Dissipation:
0.35 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Through Hole
Package:
TO-92
more info
Description:0.35 W, 50 mA, Silicon P-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channel:
Single
Gate Source Voltage:
30 V
Drain Source Resistance:
300 Ohm
Power Dissipation:
0.35 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Through Hole
Package:
TO-92
more info
Description:-40 V High-Speed SiC Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-40 V
Continous Drain Current:
50 mA
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
25 milli-ohms
Power Dissipation:
0.36 W
RoHS Compliant:
Yes
Operating Temperature:
-65 to 175 Degree C
Package Type:
Through Hole
Package:
TO-218
more info
Description:0.31 W, 30 V, 10 mA, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
30 V
Continous Drain Current:
50 mA
Drain Source Breakdown Voltage:
30 V
Power Dissipation:
0.31 W
Operating Temperature:
-65 to 150 Degree C
Package Type:
Through Hole
Package:
TO-92
more info
Description:0.625 W, 35 V, 50 mA, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
35 V
Continous Drain Current:
20 mA
Drain Source Breakdown Voltage:
35 V
Drain Source Resistance:
30 Ohm
Power Dissipation:
0.625 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Through Hole
Package:
TO-92
more info

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