Junction Field Effect Transistors (JFETs) - New Jersey Semiconductor - Page 9

219 Junction Field Effect Transistors (JFETs) from New Jersey Semiconductor meet your specification.
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  • Manufacturers : New Jersey Semiconductor
Description:0.35 W, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-40 V
Power Dissipation:
0.35 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Through Hole
Package:
TO-236
more info
Description:0.35 W, 10 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-25 V
Drain Source Resistance:
35 Ohm
Power Dissipation:
0.35 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Through Hole
Package:
TO-92
more info
Description:0.35 W, 10 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-25 V
Drain Source Resistance:
35 Ohm
Power Dissipation:
0.35 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Through Hole
Package:
TO-92
more info
Description:30 V, 50 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
30 V
Continous Drain Current:
20 to 100 mA
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
40 Ohm
Power Dissipation:
0.36 W
Operating Temperature:
-65 to 175 Degree C
Package Type:
Through Hole
Package:
TO-18
more info
Description:30 V, 50 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
30 V
Continous Drain Current:
8.0 to 80 mA
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
60 Ohm
Power Dissipation:
0.36 W
Operating Temperature:
-65 to 175 Degree C
Package Type:
Through Hole
Package:
TO-18
more info
Description:30 V, 50 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
30 V
Continous Drain Current:
8.0 to 80 mA
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
60 Ohm
Power Dissipation:
0.36 W
Operating Temperature:
-65 to 175 Degree C
Package Type:
Through Hole
Package:
TO-18
more info
Description:50 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-40 V
Power Dissipation:
0.3 W
Operating Temperature:
-65 to 200 Degree C
Package Type:
Through Hole
more info
Description:50 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-40 V
Power Dissipation:
0.3 W
Operating Temperature:
-65 to 200 Degree C
Package Type:
Through Hole
more info
Description:50 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-40 V
Power Dissipation:
0.3 W
Operating Temperature:
-65 to 200 Degree C
Package Type:
Through Hole
more info
Description:50 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-40 V
Power Dissipation:
0.3 W
Operating Temperature:
-65 to 200 Degree C
Package Type:
Through Hole
more info

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