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MOSFETs - Page 558

19,198 MOSFETs from 69 manufacturers meet your specification.
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19,198 MOSFETs from 69 Manufacturers
19,198 Products from 69 Manufacturers
Page 558 of 1280
PSMN6R0-30YLD Image
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Nexperia - PSMN6R0-30YLD

MOSFET from Nexperia
-20 to 20 V, 6.7 to 13.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
46 to 66 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
5 to 13.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
47 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK56
Industry:
Commercial, Industrial
Applications:
On-board DC-DC solutions for server and telecommun...
more info
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Advanced Power Electronics Corp - AP5525DT1

MOSFET from Advanced Power Electronics Corp
20.8 W, 100 V, 2.1 to 2.7 A, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
2.1 to 2.7 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
160 to 200 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5045-12L
Industry:
Industrial, Commercial
more info
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Panjit Semiconductor - PJA3436-AU

MOSFET from Panjit Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
310 to 900 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Automotive
more info
RM2N650LD Image
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Rectron Semiconductor - RM2N650LD

MOSFET from Rectron Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
2200 to 2500 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
23 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252(D-PAK)
Industry:
Commercial, Industrial
Applications:
Power factor correction(PFC), Switched mode power ...
more info
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First Silicon - FTK7002KDFN1006

MOSFET from First Silicon
60 V, 0.30 to 0.41 A, N-Channel Enhancement Mode

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.30 to 0.41 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1.2 to 1.8 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN1006-3L
Industry:
Industrial, Commercial
Applications:
Load Switch, Portable Applications, Power Manageme...
more info
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Cystech Electronics - MTA085N10KRN3-0-T1-G

MOSFET from Cystech Electronics
100 V, 1.9 to 2.4 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.9 to 2.4 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
80 to 170 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
more info
TK5A90E Image
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Toshiba - TK5A90E

MOSFET from Toshiba
900 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
2500 to 3100 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
R6507ENJ Image
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ROHM Semiconductor - R6507ENJ

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
605 to 665 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
78 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
IRHNM9A7120 Image
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Infineon Technologies - IRHNM9A7120

MOSFET from Infineon Technologies
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
55 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
54 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.2
Industry:
Space, Military
more info
SiR140DP-T1-RE3 Image
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Vishay - SiR140DP-T1-RE3

MOSFET from Vishay
-16 to 20 V, 52.8 to 170 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
0.54 to 0.9 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, High power density DC/D...
more info
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onsemi - NVB190N65S3F

MOSFET from onsemi
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
158 to 190 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
162 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK-3 (TO-263)
Industry:
Automotive, Industrial, Commercial
Applications:
Automotive On Board Charger, Automotive DC/DC Conv...
more info
STD4N80K5 Image
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STMicroelectronics - STD4N80K5

MOSFET from STMicroelectronics
-30 to 30 V, 10.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
2100 to 2500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
IXFH170N25X3 Image
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Littelfuse - IXFH170N25X3

MOSFET from Littelfuse
250 V, 190 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
170 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
7.4 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
890 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
DMN61D8LVTQ Image
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Diodes Incorporated - DMN61D8LVTQ

MOSFET from Diodes Incorporated
60 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.63 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1100 to 2400 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.09 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSOT26
Industry:
Automotive
more info
APT17F100S Image
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Microchip Technology - APT17F100S

MOSFET from Microchip Technology
1000 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
780 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
625 W
Temperature operating range:
-55 to 150 Degree C
Package:
D3PAK
Industry:
Commercial
Applications:
ZVS phase shifted and other full bridge, Half brid...
more info
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