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MOSFETs - Page 561

19,198 MOSFETs from 69 manufacturers meet your specification.
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19,198 MOSFETs from 69 Manufacturers
19,198 Products from 69 Manufacturers
Page 561 of 1280
PSMN8R5-100PS Image
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Nexperia - PSMN8R5-100PS

MOSFET from Nexperia
-20 to 20 V, 111 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 to 100 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
6.4 to 22.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
263 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220AB
Industry:
Commercial, Industrial
Applications:
AC-to-DC power supply equipment, Motor control, Se...
more info
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Advanced Power Electronics Corp - AP60AN2K3J

MOSFET from Advanced Power Electronics Corp
50 W, 600 V, 4 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
2.37 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251
Industry:
Industrial, Commercial
more info
PJMF280N65E1 Image
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Panjit Semiconductor - PJMF280N65E1

MOSFET from Panjit Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13.8 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
248 to 280 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
14.3 to 35.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
ITO-220AB-F
Industry:
Commercial, Military
Applications:
PFC, TV Power, PC Power, PD Charger, Adapter, UPS
more info
RM3075S8(N) Image
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Rectron Semiconductor - RM3075S8(N)

MOSFET from Rectron Semiconductor
-30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.6 to 6.8 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
22 to 103 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Commercial, Industrial
Applications:
DC/DC converters, Power management
more info
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First Silicon - FTK0903D

MOSFET from First Silicon
-100 V, -11.4 to -18 A, P-Channel Enhancement Mode

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-11.4 to -18 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
75 to 110 milli-ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
73.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Networking, Load Switch, LED applications
more info
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Cystech Electronics - MTD170P06KN3-0-T1-G

MOSFET from Cystech Electronics
-60 V, -1.6 to -2 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.6 to -2 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
145 to 290 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
more info
TK2P90E Image
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Toshiba - TK2P90E

MOSFET from Toshiba
900 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
4700 to 5900 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching Voltage Regulators
more info
R6004KNJ Image
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ROHM Semiconductor - R6004KNJ

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
900 to 1360 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
58 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
IRHMS57264SE Image
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Infineon Technologies - IRHMS57264SE

MOSFET from Infineon Technologies
250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
37 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
61 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA Low Ohmic
Industry:
Space, Military
Applications:
DC-DC converter, Motor drives
more info
SiR122DP-T1-RE3 Image
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Vishay - SiR122DP-T1-RE3

MOSFET from Vishay
-20 to 20 V, 22 to 44 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
59.6 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
6.1 to 9 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, Primary side switch, DC...
more info
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onsemi - NVB150N65S3F

MOSFET from onsemi
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
114 to 150 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
192 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK-3 (TO-263)
Industry:
Automotive, Industrial, Commercial
Applications:
Automotive On Board Charger, Automotive DC/DC Conv...
more info
STD2NK90ZT4 Image
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STMicroelectronics - STD2NK90ZT4

MOSFET from STMicroelectronics
-30 to 30 V, 19.5 to 27 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.1 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
5000 to 6500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
IXFA72N20X3 Image
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Littelfuse - IXFA72N20X3

MOSFET from Littelfuse
200 V, 55 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
72 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
20 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
320 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
DMN61D8LVT Image
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Diodes Incorporated - DMN61D8LVT

MOSFET from Diodes Incorporated
60 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.63 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1100 to 2400 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.09 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSOT26
Industry:
Automotive
more info
APT1001R1BNG Image
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Microchip Technology - APT1001R1BNG

MOSFET from Microchip Technology
1000 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10.5 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
1100 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
310 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Military
more info
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