MOSFETs - Diodes Incorporated

1385 MOSFETs from Diodes Incorporated meet your specification.

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  • Manufacturers : Diodes Incorporated
Description:AEC-Q101 Qualified SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
20 milli-ohm
Power Dissipation:
429 W
Industry:
Automotive
Applications:
EV high-power DC-DC converters, EV charging system...
more info
Description:Automotive Qualified N-Channel SiC Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
97.5 milli-ohm
Power Dissipation:
235 W
Industry:
Automotive
Applications:
EV charging systems, High voltage DC-DC converters...
more info
Description:1200 V N-Channel Enhancement Mode SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
37.2 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 milli-ohms
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO247-4
Applications:
Data center and telecom power supplies, Industrial...
more info
Description:-20 to 20 V, 4 to 7.8 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.3 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
56 to 115 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
more info
Description:-20 to 20 V, 0.36 to 0.8 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.55 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
500 to 1700 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT363
Applications:
Motor Control, Power Management Functions, DC-DC C...
more info
Description:-25 to 25 V, 5.1 to 10.5 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
36 to 75 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSOT26
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:-20 to 20 V, 8.2 to 17.3 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
19 to 50 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:-25 to 25 V, 31.2 to 64.2 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-70 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
4300 to 13000 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerDI3333-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:-12 to 12 V, 4.4 to 8.6 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
60 to 300 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.16 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSOT26
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:-25 to 25 V, 15.3 to 30.7 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
11 to 36 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info

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