1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
Filters (2)

MOSFETs

843 MOSFETs from Nexperia meet your specification.
Selected Filters Reset All
  • Manufacturers : Nexperia
  • Number of Channels : Single
PSMN1R0-100CSF Image
 Download Datasheet  Request Quote  Product Details

Nexperia - PSMN1R0-100CSF

MOSFET from Nexperia
 Download Datasheet  Request Quote
Description:100 V N-Channel MOSFET for OR-ing Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
460 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
0.65 to 2.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1550 W
Temperature operating range:
-55 to 175 Degree C
Package:
CCPAK1212i (SOT8005A)
Industry:
Industrial, Commercial
Applications:
Battery protection, High power full and half-bridg...
more info
PSMN1R0-100ASF Image
 Download Datasheet  Request Quote  Product Details

Nexperia - PSMN1R0-100ASF

MOSFET from Nexperia
 Download Datasheet  Request Quote
Description:100 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
460 A
Drain Source Breakdown Voltage:
90 to 100 V
Drain Source Resistance:
0.99 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.55 kW
Temperature operating range:
-55 to 175 Degree C
Package:
CCPAK1212 (SOT8000A)
Industry:
Commercial, Industrial
Applications:
Battery protection, High power full and half-bridg...
more info
PSMN1R3-80SSF Image
 Download Datasheet  Request Quote  Product Details

Nexperia - PSMN1R3-80SSF

MOSFET from Nexperia
 Download Datasheet  Request Quote
Description:80 V N-Channel Enhancement Mode MOSFET for Motor Control Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
335 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
341 W
Temperature operating range:
-55 to 175 Degree C
Industry:
Commercial, Industrial
Applications:
Synchronous rectifier in AC-DC and DC-DC, Primary ...
more info
NSF080120L3A0 Image
 Download Datasheet  Request Quote  Product Details

Nexperia - NSF080120L3A0

MOSFET from Nexperia
 Download Datasheet  Request Quote
Description:1200 V N-Channel SiC MOSFET for SMPS Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
183 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-3L
Industry:
Electric Vehicle, Industrial
Applications:
E-vehicle charging infrastructure, Photovoltaic in...
more info
NSF040120L3A0 Image
 Download Datasheet  Request Quote  Product Details

Nexperia - NSF040120L3A0

MOSFET from Nexperia
 Download Datasheet  Request Quote
Description:1200 V N-Channel SiC MOSFET for EV Charging Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
65 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
60 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
313 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-3L
Industry:
Electric Vehicle, Industrial
Applications:
E-vehicle charging infrastructure, Photovoltaic in...
more info
PSMNR67-30YLEX Image
 Download Datasheet  Request Quote  Product Details

Nexperia - PSMNR67-30YLEX

MOSFET from Nexperia
 Download Datasheet  Request Quote
Description:30 V N-Channel Enhancement Mode ASFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
365 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
333 W
Temperature operating range:
-55 to 175 degree C
Package:
SOT1023
Industry:
Commercial, Industrial
Applications:
Hot swap in 12 V - 20 V applications, e-Fuse, DC s...
more info
PMCB60XNE Image
 Download Datasheet  Request Quote  Product Details

Nexperia - PMCB60XNE

MOSFET from Nexperia
 Download Datasheet  Request Quote
Description:30 V N-Channel Trench Power MOSFET for Fast Switching Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.3 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
40 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.48 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT8026
Industry:
Industrial
Applications:
Battery switch, High-speed line driver, Low-side l...
more info
PMX400UPZ Image
 Download Datasheet  Request Quote  Product Details

Nexperia - PMX400UPZ

MOSFET from Nexperia
 Download Datasheet  Request Quote
Description:20 V, P-channel Trench MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.9 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
500 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN0603-3 (SOT8013)
Applications:
Battery switch, High-speed line driver, High-side ...
more info
PMX300UNEZ Image
 Download Datasheet  Request Quote  Product Details

Nexperia - PMX300UNEZ

MOSFET from Nexperia
 Download Datasheet  Request Quote
Description:30 V, N-channel Trench MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.82 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
250 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN0603-3 (SOT8013)
Applications:
Battery switch, High-speed line driver, Low-side l...
more info
PMX100UNEZ Image
 Download Datasheet  Request Quote  Product Details

Nexperia - PMX100UNEZ

MOSFET from Nexperia
 Download Datasheet  Request Quote
Description:20 V, N-channel Trench MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.4 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
160 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN0603-3 (SOT8013)
Applications:
Battery switch, High-speed line driver, Low-side l...
more info
Have a Custom Requirement?

Filters

Advanced Filters
Selected Filters Reset All
  • Manufacturers : Nexperia
  • Number of Channels : Single

Industry

Types of MOSFET

Technology

Transistor Polarity

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

MOSFETs Directory

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.