MOSFETs - Alpha & Omega Semiconductor

18 MOSFETs from Alpha & Omega Semiconductor meet your specification.

MOSFETs from Alpha & Omega Semiconductor are listed on everything PE. We have compiled a list of MOSFETs from the Alpha & Omega Semiconductor website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Alpha & Omega Semiconductor and their distributors in your region.

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  • Manufacturers : Alpha & Omega Semiconductor
Description:100 V N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
197 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN
Industry:
Commercial, Industrial
Applications:
Telecom, Solar, DC-DC
more info
Description:100 V N-Channel Trench MOSFET for Telecom Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
380 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
1.7 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
500 W
Industry:
Automotive
Applications:
Telecom hot-swap, load switch, solar, and battery ...
more info
Description:Automotive-Qualified N-Channel Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
420 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1 milli-ohms
Gate Source Voltage:
20 V
Industry:
Industrial
more info
Description:12 V Common-Drain Dual N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
2.3 milli-ohm
Gate Source Voltage:
8 V
Power Dissipation:
3.1 W
Applications:
Bbattery protection switch, mobile device battery ...
more info
Description:30 V N-Channel Enhancement Mode Trench Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
710 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
580 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
483 W
Temperature operating range:
-55 to 175 degree C
Package:
DFN 5x6
Industry:
Industrial
Applications:
High performance ORing, Efuse, Ultra high current ...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
150 to 210 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
115 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Industrial
Applications:
Renewable Industrial, EV Charger, UPS, Solar Inver...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
150 to 210 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
115 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Automotive
Applications:
xEV Charger, Electric Vehicle Supply Equipment (EV...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.3 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
500 to 700 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
44 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Industrial
Applications:
Renewable Industrial, EV Charger, UPS, Solar Inver...
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
65 to 90 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
187.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Industrial
Applications:
Renewable Industrial, EV Charger, UPS, Solar Inver...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
68 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
33 to 45 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Automotive
Applications:
xEV Charger, Electric Vehicle Supply Equipment (EV...
more info

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