MOSFETs - Alpha & Omega Semiconductor

13 MOSFETs from Alpha & Omega Semiconductor meet your specification.
Selected Filters Reset All
  • Manufacturers : Alpha & Omega Semiconductor
Description:105 V N-Channel Enhancement MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
105 V
Drain Source Resistance:
21.5 to 40.0 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
1.5 to 100 W
Package:
DPAK (TO-252)
Industry:
Industrial
Applications:
load switches, synchronous rectification, general ...
more info
Description:600 V N-Channel Enhancement MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
20 to 35 A
Drain Source Breakdown Voltage:
600 to 700 V
Drain Source Resistance:
86 to 110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
357 W
Temperature operating range:
-55 to 150 degree C
Package:
DFN8x8-4L
Industry:
Industrial
Applications:
PFC and PWM stages of Server, Telecom, Industrial,...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
68 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
33 to 45 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Industrial
Applications:
Renewable Industrial, EV Charger, UPS, Solar Inver...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
150 to 210 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
115 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Industrial
Applications:
Renewable Industrial, EV Charger, UPS, Solar Inver...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.3 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
500 to 700 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
44 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Industrial
Applications:
Renewable Industrial, EV Charger, UPS, Solar Inver...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
68 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
33 to 45 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Industrial
Applications:
Renewable Industrial, EV Charger, UPS, Solar Inver...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
68 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
33 to 45 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Automotive
Applications:
xEV Charger, Electric Vehicle Supply Equipment (EV...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40.3 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
65 to 90 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
187.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Industrial
Applications:
Renewable Industrial, EV Charger, UPS, Solar Inver...
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
65 to 90 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
187.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Industrial
Applications:
Renewable Industrial, EV Charger, UPS, Solar Inver...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
150 to 210 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
115 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3L
Industry:
Automotive
Applications:
xEV Charger, Electric Vehicle Supply Equipment (EV...
more info

FiltersReset All

Industry

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current (A)

Apply

Drain Source Breakdown Voltage (V)

Apply

Channel Configuration

Drain Source Resistance (milliohm)

Apply

Gate Source Voltage (V)

Apply

Gate Charge (nC)

Apply

Power Dissipation (W)

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.