MOSFETs

42 MOSFETs from 2 Manufacturers meet your specification.
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  • Manufacturers : Sanken Electric, Alpha & Omega Semiconductor
Description:30V Dual Asymmetric N-Channel MOSFET
Transistor Polarity:
N-Channel
Continous Drain Current:
83 to 163 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.75 milli-ohm
Gate Source Voltage:
-12 to 20 V
Power Dissipation:
59 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN 3.5x5
Industry:
Commercial, Industrial
Applications:
DC/DC Converters in Computing, Servers, and POL, I...
more info
Description:300 V, -15 to 15 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-15 to 15 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
0.15 Ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
89 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO220S-2L
Industry:
Industrial, Commercial, Automotive
Applications:
DC/DC Converter, Other Switched-mode Power Supply
more info
Description:100 V N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
197 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN
Industry:
Commercial, Industrial
Applications:
Telecom, Solar, DC-DC
more info
Description:60 V, -85 to 85 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-85 to 85 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
4 to 4.7 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO3P-3L
Industry:
Industrial, Commercial, Automotive
Applications:
Electric power steering, High current switching
more info
Description:100 V N-Channel Trench MOSFET for Telecom Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
380 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
1.7 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
500 W
Industry:
Automotive
Applications:
Telecom hot-swap, load switch, solar, and battery ...
more info
Description:40 V, -70 to 70 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-70 to 70 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
5 to 6 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
35 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO220F-3L
Industry:
Industrial, Commercial, Automotive
Applications:
EPS motor driver application
more info
Description:80 V Automotive Qualified N-Channel Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
420 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.45 milli-ohm
Gate Source Voltage:
20 V
Industry:
Industrial
Applications:
BLDC motor drive, battery management, and load swi...
more info
Description:200 V, -45 to 45 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-45 to 45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
45 to 53 milli-ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO220F-3L
Industry:
Industrial, Commercial
Applications:
PDP driving, High speed switching
more info
Description:12 V Common-Drain Dual N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
2.3 milli-ohm
Gate Source Voltage:
8 V
Power Dissipation:
3.1 W
Applications:
Bbattery protection switch, mobile device battery ...
more info
Description:300 V, -30 to 30 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-30 to 30 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
57 to 65 milli-ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
85 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO3PF-3L
Industry:
Industrial, Commercial
Applications:
PDP driving, High speed switching
more info

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