MOSFETs

879 MOSFETs from 2 Manufacturers meet your specification.
Selected Filters Reset All
  • Manufacturers : Sanken Electric, Toshiba
Description:1700 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
250 A
Drain Source Breakdown Voltage:
1700 V
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
1350 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High-Power Switching, Motor Controllers (including...
more info
Description:300 V, -15 to 15 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-15 to 15 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
0.15 Ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
89 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO220S-2L
Industry:
Industrial, Commercial, Automotive
Applications:
DC/DC Converter, Other Switched-mode Power Supply
more info
Description:650 V N-Channel Silicon MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
35 milli-ohm
Gate Source Voltage:
30 V
Power Dissipation:
360 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
Switching Voltage Regulators
more info
Description:60 V, -85 to 85 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-85 to 85 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
4 to 4.7 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO3P-3L
Industry:
Industrial, Commercial, Automotive
Applications:
Electric power steering, High current switching
more info
Description:Silicon P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-90 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
6.4 milli-ohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
170 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOP
Industry:
Automotive
Applications:
Automotive, Switching Voltage Regulators, DC-DC Co...
more info
Description:40 V, -70 to 70 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-70 to 70 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
5 to 6 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
35 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO220F-3L
Industry:
Industrial, Commercial, Automotive
Applications:
EPS motor driver application
more info
Description:3300 V N-Channel Enhancement Mode SiC MOSFET for Motor Control Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
800 A
Drain Source Breakdown Voltage:
3300 V
Drain Source Resistance:
2.75 ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
4680 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
High-Power Switching, Motor Controllers (including...
more info
Description:200 V, -45 to 45 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-45 to 45 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
45 to 53 milli-ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO220F-3L
Industry:
Industrial, Commercial
Applications:
PDP driving, High speed switching
more info
Description:Silicon Carbide N-Channel MOSFET, Silicon Carbide SBD Module
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
800 A
Drain Source Breakdown Voltage:
3300 V
Drain Source Resistance:
2.75 ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
4680 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
High-Power Switching, Motor Controllers (including...
more info
Description:300 V, -30 to 30 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-30 to 30 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
57 to 65 milli-ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
85 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO3PF-3L
Industry:
Industrial, Commercial
Applications:
PDP driving, High speed switching
more info

FiltersReset All

Industry

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.