MOSFETs - GeneSiC Semiconductor

30 MOSFETs from GeneSiC Semiconductor meet your specification.
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  • Manufacturers : GeneSiC Semiconductor
Description:1200 V, 52 to 100 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
52 to 100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
20 to 29 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
389 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:1200 V, 47 to 90 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
47 to 90 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
20 to 29 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
314 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT-227
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:1200 V, 44 to 85 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
44 to 85 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
30 to 43 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
408 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:1200 V, 36 to 70 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36 to 70 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
30 to 43 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
281 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:1200 V, 34 to 66 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 to 66 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 57 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
330 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:1200 V, 33 to 63 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 to 63 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 57 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
297 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:1200 V, 28 to 55 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
28 to 55 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 57 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
228 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:1200 V, 19 to 38 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 38 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
75 to 106 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
196 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:1200 V, 19 to 36 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 36 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
75 to 106 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
182 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:1200 V, 16 to 31 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 31 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
75 to 106 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
137 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info

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