MOSFETs - GeneSiC Semiconductor

30 MOSFETs from GeneSiC Semiconductor meet your specification.

MOSFETs from GeneSiC Semiconductor are listed on everything PE. We have compiled a list of MOSFETs from the GeneSiC Semiconductor website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to GeneSiC Semiconductor and their distributors in your region.

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  • Manufacturers : GeneSiC Semiconductor
Description:1700 V, 49 to 95 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
49 to 95 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
20 to 45 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
569 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:750 V, 19 to 37 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 37 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
60 to 78 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
127 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV /HEV Charging, DC...
more info
Description:3300 V, 17 to 33 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 to 33 A
Drain Source Breakdown Voltage:
3300 V
Drain Source Resistance:
120 to 251 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
366 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial, Automotive
Applications:
Solar string inverters, EV fast chargers, Pulse Po...
more info
Description:1700 V, 4 to 7 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 to 7 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
450 to 901 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:1700 V, 44 to 84 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
44 to 84 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
20 to 45 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
449 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT-227
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:3300 V, 2 to 5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 to 5 A
Drain Source Breakdown Voltage:
3300 V
Drain Source Resistance:
1000 to 2505 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
74 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial
Applications:
Auxiliary Power supply, solar Inverters(string and...
more info
Description:1200 V, 19 to 36 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 36 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
75 to 106 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
182 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:1700 V, 2 to 5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 to 5 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
1000 to 1479 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
44 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial
Applications:
Auxiliary Power supply, solar Inverters(string and...
more info
Description:1200 V, 34 to 66 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 to 66 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 57 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
330 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:1200 V, 28 to 55 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
28 to 55 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 57 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
228 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info

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