MOSFETs - Renesas

256 MOSFETs from Renesas meet your specification.
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  • Manufacturers : Renesas
Description:20 V, Single, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
59 to 107 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1.5 to 40 W
Package:
TO-220SMD
more info
Description:20 V, Single, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
38 to 75 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1.5 to 50 W
Package:
TO-220AB
more info
Description:15 V, Single, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.5 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
8 to 15 milliohm
Gate Source Voltage:
15 V
Package:
UPAK
more info
Description:20 V, Single, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
65 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
17 to 31 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1.5 to 100 W
Package:
TO-220SMD
more info
Description:20 V, Single, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
83 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
12 to 23 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1.5 to 120 W
Package:
TO-220AB
more info
Description:20 V, Single, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
60 to 111 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1 to 35 W
Package:
TO-251
more info
Description:20 V, Single, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
60 to 111 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1 to 35 W
Package:
TO-252
more info
Description:20 V, Single, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
0.7 to 1.2 milliohm
Gate Source Voltage:
20 V
Package:
UPAK
Industry:
Commercial
more info
Description:20 V, Single, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
0.18 to 0.45 milliohm
Gate Source Voltage:
20 V
Package:
UPAK
Industry:
Commercial
more info
Description:20 V, Single, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
0.12 to 0.24 milliohm
Gate Source Voltage:
20 V
Package:
TO-92 Mod
Industry:
Commercial
more info

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