MOSFETs - ROHM Semiconductor

835 MOSFETs from ROHM Semiconductor meet your specification.

MOSFETs from ROHM Semiconductor are listed on everything PE. We have compiled a list of MOSFETs from the ROHM Semiconductor website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to ROHM Semiconductor and their distributors in your region.

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  • Manufacturers : ROHM Semiconductor
Description:600 V Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
980 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
9.1 W
Temperature operating range:
-55 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
Switching applications
more info
Description:100 V N/P-Channel MOSFET for Switching Applications
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Continous Drain Current:
-8.5 to 8.5 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
303 milli-ohm
Power Dissipation:
20 W
Applications:
Switching and Motor Drive Applications
more info
Description:600 V Power MOSFET for Switching Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1.33 ohm
Gate Source Voltage:
30 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Applications:
Switching Applications
more info
Description:40 V N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
95 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.8 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
59 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSMT8
Applications:
Switching
more info
Description:40 V N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
3.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
59 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSOP8
Applications:
Switching
more info
Description:20 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
140 milli-ohm
Gate Source Voltage:
7 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
WLCSP
Applications:
Switching circuits, Single-Cell Battery Applicatio...
more info
Description:60 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.25 to 0.25 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1700 to 12000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-363
Industry:
Automotive
Applications:
Switching
more info
Description:600 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1400 to 1800 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
65 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Automotive
Applications:
Switching Power Supply
more info
Description:-30 to 30 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
36 to 90 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching
more info

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