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MOSFETs

717 MOSFETs from ROHM Semiconductor meet your specification.
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  • Manufacturers : ROHM Semiconductor
  • Number of Channels : Single
R6004END4TL1 Image
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ROHM Semiconductor - R6004END4TL1

MOSFET from ROHM Semiconductor
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Description:600 V Low-Radiation Noise N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
980 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
9.1 W
Temperature operating range:
-55 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
Switching applications
more info
R6004RND3 Image
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ROHM Semiconductor - R6004RND3

MOSFET from ROHM Semiconductor
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Description:600 V Power MOSFET for Switching Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1.33 ohm
Gate Source Voltage:
30 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Applications:
Switching Applications
more info
RH6G040BGTB1 Image
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ROHM Semiconductor - RH6G040BGTB1

MOSFET from ROHM Semiconductor
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Description:40 V N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
95 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.8 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
59 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSMT8
Applications:
Switching
more info
RS6G100BGTB1 Image
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ROHM Semiconductor - RS6G100BGTB1

MOSFET from ROHM Semiconductor
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Description:40 V N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
3.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
59 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSOP8
Applications:
Switching
more info
RA1C030LDT5CL Image
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ROHM Semiconductor - RA1C030LDT5CL

MOSFET from ROHM Semiconductor
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Description:20 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
140 milli-ohm
Gate Source Voltage:
7 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
WLCSP
Applications:
Switching circuits, Single-Cell Battery Applicatio...
more info
R6004PND3FRA Image
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ROHM Semiconductor - R6004PND3FRA

MOSFET from ROHM Semiconductor
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Description:600 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1400 to 1800 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
65 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Automotive
Applications:
Switching Power Supply
more info
RJ1U330AAFRG Image
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ROHM Semiconductor - RJ1U330AAFRG

MOSFET from ROHM Semiconductor
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Description:250 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-33 to 33 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
77 to 165 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
211 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Automotive
Applications:
Switching
more info
R8002ANJFRG Image
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ROHM Semiconductor - R8002ANJFRG

MOSFET from ROHM Semiconductor
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Description:800 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
3300 to 7200 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
62 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Automotive
Applications:
Switching Power Supply
more info
R8001CND3FRA Image
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ROHM Semiconductor - R8001CND3FRA

MOSFET from ROHM Semiconductor
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Description:800 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1 to 1 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
6700 to 8700 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
36 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Automotive
Applications:
Switching
more info
R6020PNJFRA Image
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ROHM Semiconductor - R6020PNJFRA

MOSFET from ROHM Semiconductor
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Description:600 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-20 to 20 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
190 to 370 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
304 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Automotive
Applications:
Switching Power Supply
more info
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  • Number of Channels : Single

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