MOSFETs - Infineon Technologies

1100 MOSFETs from Infineon Technologies meet your specification.
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  • Manufacturers : Infineon Technologies
Description:40 V N-Channel Logic Level MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
64 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
5.75 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
39.1 W
Temperature operating range:
-55 to 150 Degree C
Applications:
Wireless charging, Charger, Robots & drones, Indus...
more info
Description:Automotive Qualified SiC Trench Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
205 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
8.7 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
882 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO263-7
Industry:
Automotive
Applications:
On-board charger, DC/DC converter, Auxiliary drive...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 to 137 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.2 to 5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 to 107 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TTFN-9-1
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring, Battery mana...
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 to 253 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.65 to 1.4 milli-ohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
2.1 to 89 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TTFN-9-1
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring, Battery mana...
more info
Description:80 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 99 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.3 to 8.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 to 100 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-WHSON-8
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring, Battery mana...
more info
Description:25 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
47 to 310 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
0.49 to 0.75 milli-ohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
2.1 to 89 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-WHSON-8
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring, Battery mana...
more info
Description:80 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 101 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.3 to 8.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 to 100 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TSON-8-4
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring, Battery mana...
more info
Description:25 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
41 to 298 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
0.5 to 0.8 milli-ohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
2.1 to 89 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TTFN-9-1
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring
more info
Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
31 to 205 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.1 to 1.9 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 to 107 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-WHSON-8
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring, Battery mana...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 to 137 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.2 to 5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 to 107 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TSON-8-4
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring, Battery mana...
more info

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