MOSFETs

977 MOSFETs from Infineon Technologies meet your specification.
Selected Filters Reset All
  • Manufacturers : Infineon Technologies
  • Number of Channels : Single
Description:Automotive Grade N-Channel Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
87 to 106 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
9.5 to 20 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
390 W
Temperature operating range:
-40 to 125 Degree C
Package:
TO247
Industry:
Industrial, Commercial
Applications:
Power conditioning unit, Power distribution unit, ...
more info
Description:Radiation-Tolerant N-Channel Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
62 to 98 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
16.7 to 35 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
390 W
Temperature operating range:
-40 to 125 Degree C
Package:
TO247
Industry:
Industrial, Commercial
Applications:
Power conditioning unit, Power distribution unit, ...
more info
Description:40 V Rad-Hard N-Channel Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 to 52 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
27 to 45 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-40 to 125 Degree C
Package:
D2PAK (TO263)
Industry:
Industrial, Commercial
Applications:
Power conditioning unit, Power distribution unit, ...
more info
Description:150 V Rad-Hard N-Channel Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 to 36 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
49 to 100 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-40 to 125 Degree C
Package:
D2PAK (TO263)
Industry:
Industrial, Commercial
Applications:
Power conditioning unit, Power distribution unit, ...
more info
Description:N-Channel Power MOSFET for Hot-Swap Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC, Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
159 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.3 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
179 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO263-3
Industry:
Commercial, Industrial
Applications:
Telecom, Battery management
more info
Description:80 V Automotive Qualified Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
274 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.3 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
219 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8-53
Industry:
Automotive
Applications:
General automotive applications
more info
Description:40 V N-Channel Logic Level MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
64 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
5.75 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
39.1 W
Temperature operating range:
-55 to 150 Degree C
Applications:
Wireless charging, Charger, Robots & drones, Indus...
more info
Description:Automotive Qualified SiC Trench Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
205 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
8.7 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
882 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO263-7
Industry:
Automotive
Applications:
On-board charger, DC/DC converter, Auxiliary drive...
more info
Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
31 to 205 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.1 to 1.9 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 to 107 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TTFN-9-1
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring
more info
Description:80 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 101 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.3 to 8.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 to 100 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TTFN-9-1
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring, Battery mana...
more info

Filters

Selected Filters Reset All
  • Manufacturers : Infineon Technologies
  • Number of Channels : Single

Industry

Types of MOSFET

Technology

Transistor Polarity

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.