MOSFETs

2972 MOSFETs from 3 Manufacturers meet your specification.
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  • Manufacturers : Vishay, Diodes Incorporated, GeneSiC Semiconductor
Description:600 V Power MOSFET for SMPS Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
51 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
74 milli-ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
500 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK
Industry:
Artificial Intelligence, Commercial, Industrial
Applications:
Server and telecom power supplies, Switch mode pow...
more info
Description:AEC-Q101 Qualified SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
20 milli-ohm
Power Dissipation:
429 W
Industry:
Automotive
Applications:
EV high-power DC-DC converters, EV charging system...
more info
Description:1700 V, 49 to 95 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
49 to 95 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
20 to 45 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
569 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:80 V Symmetric Dual N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
19 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
56.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAIR 3 x 3FS
Applications:
Synchronous buck, Half bridge, POL, Telecom DC/DC
more info
Description:Automotive Qualified N-Channel SiC Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
97.5 milli-ohm
Power Dissipation:
235 W
Industry:
Automotive
Applications:
EV charging systems, High voltage DC-DC converters...
more info
Description:750 V, 19 to 37 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 37 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
60 to 78 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
127 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV /HEV Charging, DC...
more info
Description:N-Channel 30 V (D-S) MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
198 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
87 milli-ohm
Gate Source Voltage:
-12 to 16 V
Power Dissipation:
57 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK
Applications:
DC/DC converter, Synchronous rectification, Batter...
more info
Description:1200 V N-Channel Enhancement Mode SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
37.2 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 milli-ohms
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO247-4
Applications:
Data center and telecom power supplies, Industrial...
more info
Description:3300 V, 17 to 33 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 to 33 A
Drain Source Breakdown Voltage:
3300 V
Drain Source Resistance:
120 to 251 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
366 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial, Automotive
Applications:
Solar string inverters, EV fast chargers, Pulse Po...
more info
Description:650 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
47 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.058 ohm
Gate Source Voltage:
30 V
Power Dissipation:
312 W
Temperature operating range:
-55 to 150 Degree C
Applications:
Server and telecom power supplies: Switch mode pow...
more info

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