MOSFETs

4632 MOSFETs from 4 Manufacturers meet your specification.
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  • Manufacturers : Vishay, Diodes Incorporated, Littelfuse, First Silicon
Description:600 V Power MOSFET for SMPS Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
51 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
74 milli-ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
500 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK
Industry:
Artificial Intelligence, Commercial, Industrial
Applications:
Server and telecom power supplies, Switch mode pow...
more info
Description:AEC-Q101 Qualified P-Channel Enhancement Mode MOSFET
Transistor Polarity:
P-Channel
Continous Drain Current:
-6 A
Drain Source Breakdown Voltage:
-500 V
Drain Source Resistance:
4.2 ohms
Gate Source Voltage:
20 V
Power Dissipation:
58 W
Applications:
High-side switches, Push-pull amplifiers, DC chopp...
more info
Description:AEC-Q101 Qualified SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
20 milli-ohm
Power Dissipation:
429 W
Industry:
Automotive
Applications:
EV high-power DC-DC converters, EV charging system...
more info
Description:30 V, 168 W, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
111 to 176 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.4 to 4.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
168 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
MB / VGA / Vcore, POL Applications, SMPS 2nd SR
more info
Description:80 V Symmetric Dual N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
19 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
56.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAIR 3 x 3FS
Applications:
Synchronous buck, Half bridge, POL, Telecom DC/DC
more info
Description:800 V N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
100 mA
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
45 ohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
2.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-223-2L
Applications:
Normally on switches, Solid state relays, Converte...
more info
Description:Automotive Qualified N-Channel SiC Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
97.5 milli-ohm
Power Dissipation:
235 W
Industry:
Automotive
Applications:
EV charging systems, High voltage DC-DC converters...
more info
Description:-30 V, 1.56 W, P-Channel Enhancement Mode, MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.2 to -5.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
27 to 46 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.56 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3S
Industry:
Industrial, Commercial
Applications:
Notebook, Load Switch, LED applications, Hand-Held...
more info
Description:N-Channel 30 V (D-S) MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
198 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
87 milli-ohm
Gate Source Voltage:
-12 to 16 V
Power Dissipation:
57 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK
Applications:
DC/DC converter, Synchronous rectification, Batter...
more info
Description:-500 V, 205 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-40 A
Drain Source Breakdown Voltage:
-500 V
Drain Source Resistance:
230 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
890 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-264
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info

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