MOSFETs

2492 MOSFETs from 3 Manufacturers meet your specification.
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  • Manufacturers : Vishay, MOSPEC SEMICONDUCTOR, Nexperia
Description:600 V Power MOSFET for SMPS Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
51 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
74 milli-ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
500 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK
Industry:
Artificial Intelligence, Commercial, Industrial
Applications:
Server and telecom power supplies, Switch mode pow...
more info
Description:1200 V N-Channel SiC MOSFET for SMPS Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
183 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-3L
Industry:
Electric Vehicle, Industrial
Applications:
E-vehicle charging infrastructure, Photovoltaic in...
more info
Description:30 V, 111 to 176 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
111 to 176 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.4 to 4.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
168 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
MB / VGA / Vcore, POL Applications, SMPS 2nd SR
more info
Description:80 V Symmetric Dual N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
19 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
56.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAIR 3 x 3FS
Applications:
Synchronous buck, Half bridge, POL, Telecom DC/DC
more info
Description:1200 V N-Channel SiC MOSFET for EV Charging Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
65 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
60 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
313 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-3L
Industry:
Electric Vehicle, Industrial
Applications:
E-vehicle charging infrastructure, Photovoltaic in...
more info
Description:100 V, 58 to 90 mA, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
58 to 90 mA
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
5.6 to 6.7 milli-ohm
Gate Source Voltage:
-12 to 20 V
Power Dissipation:
128 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Networking, Load Switch, LED applications, Quick C...
more info
Description:N-Channel 30 V (D-S) MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
198 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
87 milli-ohm
Gate Source Voltage:
-12 to 16 V
Power Dissipation:
57 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK
Applications:
DC/DC converter, Synchronous rectification, Batter...
more info
Description:30 V N-Channel Enhancement Mode ASFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
365 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
333 W
Temperature operating range:
-55 to 175 degree C
Package:
SOT1023
Industry:
Commercial, Industrial
Applications:
Hot swap in 12 V - 20 V applications, e-Fuse, DC s...
more info
Description:100 V, 85 to 135 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
85 to 135 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.4 to 4.1 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
240 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Networking, Load Switch, LED applications, Quick C...
more info
Description:650 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
47 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.058 ohm
Gate Source Voltage:
30 V
Power Dissipation:
312 W
Temperature operating range:
-55 to 150 Degree C
Applications:
Server and telecom power supplies: Switch mode pow...
more info

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