MOSFETs - STMicroelectronics

1149 MOSFETs from STMicroelectronics meet your specification.

MOSFETs from STMicroelectronics are listed on everything PE. We have compiled a list of MOSFETs from the STMicroelectronics website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to STMicroelectronics and their distributors in your region.

Selected Filters Reset All
  • Manufacturers : STMicroelectronics
Description:600 V Automotive Qualified N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
99 milli-ohm
Gate Source Voltage:
30 V
Power Dissipation:
179 W
Temperature operating range:
-55 to 150 Degree C
Package:
H²PAK-2
Industry:
Automotive
Applications:
High efficiency switching applications
more info
Description:100 V N-Channel Enhancement MOSFET for Industrial Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Industry:
Industrial
more info
Description:Automotive-Grade N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
32 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
89 milli-ohm
Gate Source Voltage:
25 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
ACEPACK SMIT
Industry:
Automotive
Applications:
Switching applications
more info
Description:Automotive Qualified N-Channel Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
64 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
35 milli-ohm
Gate Source Voltage:
25 V
Power Dissipation:
379 W
Temperature operating range:
-55 to 150 Degree C
Package:
ACEPACK SMIT
Industry:
Automotive
Applications:
Switching applications
more info
Description:1200 V Automotive Qualified MOSFET Power Module
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
488 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.60 milliohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
869 W
Temperature operating range:
-40 to 175 Degree C
Package:
ACEPACK DRIVE
Industry:
Automotive
Applications:
Main inverter (electric traction)
more info
Description:SiC Power MOSFET for Electric Traction Inverters
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
275 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
5.05 milliohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
549 W
Temperature operating range:
-40 to 175 Degree C
Package:
ACEPACK DRIVE
Industry:
Automotive
Applications:
Main inverter (electric traction)
more info
Description:1200 V SiC MOSFET for Electric Vehicle Traction Inverters
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
379 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
3.45 milliohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
704 W
Temperature operating range:
-40 to 175 Degree C
Package:
ACEPACK DRIVE
Industry:
Automotive
Applications:
Main inverter (electric traction)
more info
Description:N Channel Enhancement Mode MOSFET for Switching Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
45 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
245 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial
Applications:
High efficiency switching applications
more info
Description:600 V N-Channel Silicon Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
38 to 43 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
245 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial
Applications:
Llc resonant converter, Power supplies and convert...
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
72 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD.5
Industry:
Space, Military
more info

FiltersReset All

Industry

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.