MOSFETs - Toshiba

835 MOSFETs from Toshiba meet your specification.
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  • Manufacturers : Toshiba
Description:Dual N Channel Power MOSFET for Battery Protection Circuits
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.8 to 1.4 W
Applications:
Battery protection circuits
more info
Description:-60 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
1300 to 2000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
150 Degree C
Package:
SOT-346
Applications:
High Speed Switching Applications, Analog Switch A...
more info
Description:-30 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
2400 to 4000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
150 Degree C
Package:
SOT-346
Applications:
High Speed Switching Applications, Analog Applicat...
more info
Description:30 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1200 to 2000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
150 Degree C
Package:
SOT-346
Applications:
High Speed Switching Applications, Analog Switch A...
more info
Description:60 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
8 to 15 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
150 Degree C
Package:
TO-3P
Applications:
Chopper Regulator, DC-DC Converter and Motor Drive
more info
Description:-30 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
2100 to 6000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-323
Applications:
Management Switch High Speed Switching Application...
more info
Description:-20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
28 to 140 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT-323
Applications:
Power Management Switch Applications, High-Current...
more info
Description:-20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
20.9 to 41.1 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT-323
Applications:
Power Management Switch Applications
more info
Description:-12 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.4 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
14 to 94 Milliohm
Gate Source Voltage:
-6 to 6 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-323
Applications:
Power Management Switches
more info
Description:-20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
24.9 to 56 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-323
Applications:
Power Management Switch Applications
more info

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Gate Source Voltage (V)

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