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MOSFETs

774 MOSFETs from Toshiba meet your specification.
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  • Manufacturers : Toshiba
  • Number of Channels : Single
XPN19014MC Image
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Toshiba - XPN19014MC

MOSFET from Toshiba
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Description:Automotive-Qualified P-Channel Enhancement Mode MOSFET
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-20 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
18.7 milli-ohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 175 Degree C
Industry:
Automotive
Applications:
Automotive, Switching Voltage Regulators, DC-DC Co...
more info
TK042N65Z5 Image
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Toshiba - TK042N65Z5

MOSFET from Toshiba
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Description:650 V N-Channel Silicon MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
35 milli-ohm
Gate Source Voltage:
30 V
Power Dissipation:
360 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
Switching Voltage Regulators
more info
XPH8R316MC Image
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Toshiba - XPH8R316MC

MOSFET from Toshiba
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Description:Silicon P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-90 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
6.4 milli-ohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
170 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOP
Industry:
Automotive
Applications:
Automotive, Switching Voltage Regulators, DC-DC Co...
more info
XPJR6604PB,LXHQ Image
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Toshiba - XPJR6604PB,LXHQ

MOSFET from Toshiba
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Description:Automotive Qualified N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
200 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.75 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
375 W
Temperature operating range:
-55 to 175 Degree C
Industry:
Automotive
Applications:
Automotive, Switching Voltage Regulators, Motor Dr...
more info
TW140N120C Image
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Toshiba - TW140N120C

MOSFET from Toshiba
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Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
140 to 197 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
107 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching Voltage Regulators
more info
TW030N120C Image
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Toshiba - TW030N120C

MOSFET from Toshiba
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Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
30 to 43 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
249 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching Voltage Regulators
more info
TW083N65C Image
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Toshiba - TW083N65C

MOSFET from Toshiba
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Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
83 to 113 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
111 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching Voltage Regulators
more info
TW107N65C Image
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Toshiba - TW107N65C

MOSFET from Toshiba
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Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
107 to 145 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
76 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching Voltage Regulators
more info
TW060N120C Image
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Toshiba - TW060N120C

MOSFET from Toshiba
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Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
60 to 78 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
170 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching Voltage Regulators
more info
TW027N65C Image
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Toshiba - TW027N65C

MOSFET from Toshiba
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Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
58 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
27 to 37 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
156 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247
Industry:
Industrial, Commercial
Applications:
Switching Voltage Regulators
more info
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  • Number of Channels : Single

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