MOSFETs - Advanced Linear Devices

92 MOSFETs from Advanced Linear Devices meet your specification.
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  • Manufacturers : Advanced Linear Devices
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.025 to 0.04 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
50000 to 750000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
SOIC
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.025 to 0.04 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
50000 to 750000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
SOIC
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.025 to 0.04 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
50000 to 750000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
SOIC
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.025 to 0.04 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
50000 to 750000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
Plastic Dip
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.025 to 0.04 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
50000 to 750000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
Plastic Dip
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.025 to 0.04 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
50000 to 750000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
Plastic Dip
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.003 to 0.0048 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
350000 to 500000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
SOIC
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.003 to 0.0048 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
350000 to 500000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
SOIC
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.003 to 0.0048 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
350000 to 500000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
Plastic Dip
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.003 to 0.0048 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
350000 to 500000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
Plastic Dip
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info

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