MOSFETs - Rectron Semiconductor

408 MOSFETs from Rectron Semiconductor meet your specification.
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  • Manufacturers : Rectron Semiconductor
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
165 to 210 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
180 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Power factor correction(PFC), Switched mode power ...
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
165 to 210 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
33 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Commercial, Industrial
Applications:
Power factor correction(PFC), Switched mode power ...
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
150 to 180 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
188 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Power factor correction(PFC), Switched mode power ...
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
150 to 180 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
200 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
Power factor correction(PFC), Switched mode power ...
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
150 to 180 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
33.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Commercial, Industrial
Applications:
Power factor correction(PFC), Switched mode power ...
more info
Description:700 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
700 V
Drain Source Resistance:
165 to 190 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
200 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Power factor correction(PFC), Switched mode power ...
more info
Description:150 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
59 to 65 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
68 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252(D-PAK)
Industry:
Commercial, Industrial
Applications:
LED backlighting, Ideal for high-frequency switchi...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
27 to 35 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252(D-PAK)
Industry:
Commercial, Industrial
Applications:
Power switching application, Hard switched and hig...
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
165 to 210 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
180 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263(D2-PAK)
Industry:
Commercial, Industrial
Applications:
Power factor correction(PFC), Switched mode power ...
more info
Description:700 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
700 V
Drain Source Resistance:
165 to 190 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
34 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Commercial, Industrial
Applications:
Power factor correction(PFC), Switched mode power ...
more info

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