MOSFETs - TT Electronics

42 MOSFETs from TT Electronics meet your specification.
Selected Filters Reset All
  • Manufacturers : TT Electronics
Description:35 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.4 A
Drain Source Breakdown Voltage:
35 V
Drain Source Resistance:
1300 to 5000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
6.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
Switching Regulators, Converters, Motor Drives, Ae...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1700 to 5600 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.725 to 5 W
Temperature operating range:
-65 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:90 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.9 A
Drain Source Breakdown Voltage:
90 V
Drain Source Resistance:
5300 to 7500 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.725 to 5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
85 to 90 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
300 to 345 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
FAST SWITCHING, MOTOR CONTROLS, POWER SUPPLIES, Ae...
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.2 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
180 to 207 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20.833 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
Designed For Switching, Power Supply, Motor Contro...
more info
Description:200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.5 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
250 to 400 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:-100 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
600 to 690 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:-100 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.8 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
300 to 540 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20.833 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
Designed For Switching, Power Supply, Motor Contro...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5000 to 9000 milliohm
Gate Source Voltage:
-40 to 40 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23(LCC1)
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info

FiltersReset All

Industry

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current (A)

Drain Source Breakdown Voltage (V)

Channel Configuration

Drain Source Resistance (milliohm)

Gate Source Voltage (V)

Gate Charge (nC)

Power Dissipation (W)

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.