MOSFETs - TT Electronics

42 MOSFETs from TT Electronics meet your specification.

MOSFETs from TT Electronics are listed on everything PE. We have compiled a list of MOSFETs from the TT Electronics website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to TT Electronics and their distributors in your region.

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  • Manufacturers : TT Electronics
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.2 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
180 to 207 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20.833 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
Designed For Switching, Power Supply, Motor Contro...
more info
Description:100 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
350 to 400 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:400 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
200 to 230 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254AA
Industry:
Space, Industrial, Commercial
Applications:
Designed For Switching, Power Supply, Motor Contro...
more info
Description:200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.5 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
250 to 400 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:-100 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-18 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
200 to 230 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
190 to 220 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO–257AA
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:-100 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-9.3 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
310 to 360 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO–257AB
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:1000 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.6 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
4000 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO220
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
28 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
77 to 89 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:-100 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-13 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
210 to 240 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO–257AB
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info

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