Dual Channel MOSFETs

1865 Dual Channel MOSFETs from 38 Manufacturers meet your specification.

Dual Channel MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Number of Channels : Dual
Description:20 V P-Channel Power MOSFET for Small Signal Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
18 to 30 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Commercial, Industrial
Applications:
general purpose, Load Switching, PWM
more info
Description:1200, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
800 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
1.7 to 2.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3120 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
AC Motor control, Motion servo control, Power Supp...
more info
Description:30 V, 27 W, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
22 to 35 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
10 to 16 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
27 W
Temperature operating range:
-55 to 150 Degree C
Package:
PPAK3x3
Industry:
Industrial, Commercial
Applications:
MB / VGA / Vcore, POL Applications, SMPS 2nd SR
more info
Description:1200 V, 68 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
68 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
0.025 ohm
Industry:
Industrial, Commercial
more info
Description:80 V Symmetric Dual N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
19 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
56.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAIR 3 x 3FS
Applications:
Synchronous buck, Half bridge, POL, Telecom DC/DC
more info
Description:20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
7.3 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
23 to 50 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.9 W
Temperature operating range:
150 Degree C
Industry:
Industrial, Commercial
Applications:
Lithium-ion Battery Protection
more info
Description:20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
8 to 17 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
CSPB2718-6
Industry:
Commercial, Industrial
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
318 to 990 milliohm
Gate Source Voltage:
- 8 to 8 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-563
Industry:
Commercial, Military
more info
Description:300 V, -15 to 15 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-15 to 15 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
0.15 Ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
89 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO220S-2L
Industry:
Industrial, Commercial, Automotive
Applications:
DC/DC Converter, Other Switched-mode Power Supply
more info
Description:20 V, 7.4 to 9.5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
7.4 to 9.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
11 to 20.5 milli-ohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
2.0 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSSOP-8
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info

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