MOSFETs

907 MOSFETs from 20 Manufacturers meet your specification.
Selected Filters Reset All
  • Number of Channels : Dual
  • Package Type : Surface Mount
  • Transistor Polarity : N-Channel
  • Types of MOSFET : N-Channel Enhancement Mode
Description:50 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1400 to 3500 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 ºC
Package:
SOT363
Applications:
Load Switch
more info
Description:50 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.31 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1200 to 5200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.49 W
Temperature operating range:
-55 to 150 ºC
Package:
SOT363
Applications:
Load Switch
more info
Description:50 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1400 to 3500 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 ºC
Package:
SOT363
Applications:
Load Switch
more info
Description:8 to 12 V, Dual, N/P Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-20.9 to 31.3 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
9.6 to 53 milliohm
Gate Source Voltage:
8 to 12 V
Power Dissipation:
2.6 to 25 W
Temperature operating range:
-55 to 150 Degree C
Applications:
Motor Control, DC-DC Converters, Power Management ...
more info
Description:60 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.41 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1200 to 2100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.58 W
Temperature operating range:
-55 to 150 ºC
Package:
SOT563
Applications:
Battery Operated Systems and Solid-State Relays, D...
more info
Description:60 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.41 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1200 to 2100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.65 W
Temperature operating range:
-55 to 150 ºC
Package:
SOT563
Applications:
Battery Operated Systems and Solid-State Relays, D...
more info
Description:30 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
9.8 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
12 to 22 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 ºC
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:30 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
13.4 to 31 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
1.42 W
Temperature operating range:
-55 to 150 ºC
Package:
SO-8
more info
Description:30 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
13.4 to 32.5 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
1.42 W
Temperature operating range:
-55 to 150 ºC
Package:
SO-8
Applications:
General Purpose Interfacing Switch, Power Manageme...
more info
Description:24 V, 6.5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
6.5 A
Drain Source Breakdown Voltage:
24 V
Drain Source Resistance:
11 to 20 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.98 W
Temperature operating range:
-55 to 150 Degree C
Package:
W-DFN5020-6
Applications:
Power Management Functions, DC-DC Converters
more info

FiltersReset All

Industry

Manufacturers

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current (A)

Apply

Drain Source Breakdown Voltage (V)

Apply

Channel Configuration

Drain Source Resistance (milliohm)

Apply

Gate Source Voltage (V)

Apply

Gate Charge (nC)

Apply

Power Dissipation (W)

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.