MOSFETs - Hex

10 MOSFETs from 3 Manufacturers meet your specification.
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  • Number of Channels : Hex
Description:1.7 to 3.5 V, 910 nC, N-Channel Enhancement Mode
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
295 to 340 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
3.25 to 5.15 milliohm
Temperature operating range:
-40 to 125 Degree C
Industry:
Commercial, Industrial
more info
Description:1.7 to 3.5 V, 910 nC, N-Channel Enhancement Mode
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
350 to 450 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
3.25 to 5.15 milliohm
Temperature operating range:
-40 to 125 Degree C
Industry:
Commercial, Industrial
more info
Description:1200 V 3-Phase SiC MOSFET for Inverter Applications
Types of MOSFET:
N-Channel Depletion Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
550 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.53 milli-ohm
Temperature operating range:
-40 to 125 Degree C
Industry:
Commercial, Industrial
Applications:
Inverter Applications
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
200 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
5.5 to 9.1 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 125 Degree C
Industry:
Automotive, Industrial, Commercial
Applications:
AutomotiveApplications, HybridElectricalVehicles(H...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
52.9 to 114 milliohm
Gate Source Voltage:
-10 to 23 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 125 Degree C
Industry:
Industrial, Commercial
Applications:
High-frequency switching application, DC/DC conver...
more info
Description:-200 to 200 V, -2.8 to 3.2 A, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Technology:
Silicon
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Hex
Continous Drain Current:
-2.8 to 3.2 A
Drain Source Breakdown Voltage:
-200 to 200 V
Drain Source Resistance:
5300 to 10000 milliohm
Temperature operating range:
-55 to 150 Degree C
Package:
VQFN
Industry:
Commercial, Industrial
Applications:
High-Voltage Pulser, Amplifiers, Buffers, Piezoele...
more info
Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
400 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.75 to 4.55 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Automotive
Applications:
Automotive Applications, Hybrid Electrical Vehicle...
more info
Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
11.3 to 16.5 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
3-level-applications, High Frequency Switching app...
more info
Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
400 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.75 to 4.55 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Automotive
Applications:
Automotive Applications, Hybrid Electrical Vehicle...
more info
Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
45 to 66 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info

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