Quad Channel MOSFETs

77 Quad Channel MOSFETs from 5 Manufacturers meet your specification.

Quad Channel MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Number of Channels : Quad
Description:100 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
25 to 50 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.9 W
Temperature operating range:
-55 to 150 Degree C
Package:
V-DFN5045-12
Industry:
Automotive, Commercial, Industrial
Applications:
Motor Control, DC-DC Converters, Power Management
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
1.8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
330 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
Industry:
Space, Military
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
4.6 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
310 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
Industry:
Space, Military
more info
Description:-100 to 100 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Quad
Continous Drain Current:
-0.96 to 1.6 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
290 to 690 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
Industry:
Space, Military
more info
Description:-100 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Quad
Continous Drain Current:
-2.3 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
1100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
Industry:
Space, Military
more info
Description:250 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.8 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
1100 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
Industry:
Space, Military
more info
Description:250 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
1.9 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
1800 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
Industry:
Space, Military
more info
Description:-100 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Quad
Continous Drain Current:
-2.8 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
1200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
Industry:
Space, Military
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
1.8 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
285 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
MO-036AB
Industry:
Space, Military
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
600 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
Industry:
Space, Military
more info

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