Quad Channel MOSFETs

86 Quad Channel MOSFETs from 8 Manufacturers meet your specification.

Quad Channel MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Number of Channels : Quad
Description:Quad Supercapacitor Auto-Balancing MOSFET Array
Types of MOSFET:
N-Channel Depletion Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.08 A
Drain Source Breakdown Voltage:
10.6 V
Drain Source Resistance:
26000 MegaOhm
Power Dissipation:
0.5 W
Temperature operating range:
-40 to 85 degree C
Package:
16-Pin SOIC
Industry:
Commercial, Industrial
Applications:
Series-connected supercapacitor cell leakage balan...
more info
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.08 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
25000 to 10000000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
Plastic Dip
Industry:
Commercial, Industrial
Applications:
Low overhead current mirrors and current sources, ...
more info
Description:1200, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
300 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
4.5 to 6.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1190 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
AC Motor control, Motion servo control, Power Supp...
more info
Description:10.6 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.003 to 0.012 A
Drain Source Breakdown Voltage:
10.6 V
Drain Source Resistance:
500000 to 104000000 milliohm
Gate Source Voltage:
10.6 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
Plastic Dip
Industry:
Commercial, Industrial
Applications:
Energy harvesting circuits, Very low voltage analo...
more info
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.08 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
25000 to 10000000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
16-Pin Plastic Dip
Industry:
Commercial, Industrial
Applications:
Low overhead current mirrors and current sources, ...
more info
Description:1200, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
400 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
3.4 to 4.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1560 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
AC Motor control, Motion servo control, Power Supp...
more info
Description:1200, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
400 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
3.4 to 4.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1560 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
AC Motor control, Motion servo control, Power Supp...
more info
Description:100 V, 5 A, N-Channel Enhancement Mode HERMETIC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
0.18 to 0.20 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
27 W
Temperature operating range:
-55 to 150 Degree C
Package:
LCC-28T
Industry:
Industrial, Commercial
more info
Description:-8 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Quad
Continous Drain Current:
-0.00183 A
Drain Source Breakdown Voltage:
-8 V
Drain Source Resistance:
1200000 milliohm
Gate Source Voltage:
-8 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
16-Pin SOIC
Industry:
Commercial, Industrial
Applications:
0.5% precision current mirrors and current sources...
more info
Description:10.6 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.003 to 0.012 A
Drain Source Breakdown Voltage:
10.6 V
Drain Source Resistance:
500000 milliohm
Gate Source Voltage:
10.6 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
Plastic Dip
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info

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