MOSFETs

3913 MOSFETs from 24 Manufacturers meet your specification.
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  • Number of Channels : Single
  • Package Type : Through Hole
  • Transistor Polarity : N-Channel
  • Types of MOSFET : N-Channel Enhancement Mode
Description:-30 to 30 V, 40 to 56 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.2 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
1500 to 1800 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
I2PAK
Applications:
Switching applications
more info
Description:-30 to 30 V, 19.5 to 27 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.1 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
5000 to 6500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
IPAK
Applications:
Switching applications
more info
Description:-30 to 30 V, 19 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
3800 to 4500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
IPAK
Applications:
Switching applications
more info
Description:-30 to 30 V, 22.5 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
3000 to 3500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Temperature operating range:
-55 to 150 Degree C
Package:
IPAK
Applications:
Switching applications
more info
Description:-30 to 30 V, 15 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
550 to 630 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
Description:30 V, 21.5 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
1050 V
Drain Source Resistance:
1000 to 1300 Milliohm
Gate Source Voltage:
30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
Description:-30 to 30 V, 22 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
470 to 600 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
Description:-30 to 30 V, 22 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
650 to 800 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
Description:-30 to 30 V, 43.6 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
350 to 400 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
-65 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
Description:-30 to 30 V, 44.2 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
620 to 690 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info

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