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Automotive Qualified MOSFETs

2246 Automotive Qualified MOSFETs from 28 Manufacturers meet your specification.

Automotive Qualified MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Industry : Automotive
XPN19014MC Image
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Toshiba - XPN19014MC

Automotive Qualified MOSFET from Toshiba
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Description:Automotive-Qualified P-Channel Enhancement Mode MOSFET
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-20 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
18.7 milli-ohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 175 Degree C
Industry:
Automotive
Applications:
Automotive, Switching Voltage Regulators, DC-DC Co...
more info
IAUCN08S7N013 Image
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Infineon Technologies - IAUCN08S7N013

Automotive Qualified MOSFET from Infineon Technologies
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Description:80 V Automotive Qualified Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
274 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.3 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
219 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8-53
Industry:
Automotive
Applications:
General automotive applications
more info
STH60N099DM9-2AG Image
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STMicroelectronics - STH60N099DM9-2AG

Automotive Qualified MOSFET from STMicroelectronics
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Description:600 V Automotive Qualified N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
99 milli-ohm
Gate Source Voltage:
30 V
Power Dissipation:
179 W
Temperature operating range:
-55 to 150 Degree C
Package:
H²PAK-2
Industry:
Automotive
Applications:
High efficiency switching applications
more info
DMWSH120H28SM4Q Image
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Diodes Incorporated - DMWSH120H28SM4Q

Automotive Qualified MOSFET from Diodes Incorporated
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Description:AEC-Q101 Qualified SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
20 milli-ohm
Power Dissipation:
429 W
Industry:
Automotive
Applications:
EV high-power DC-DC converters, EV charging system...
more info
AMDV040N029LVRH Image
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Magnachip Semiconductor - AMDV040N029LVRH

Automotive Qualified MOSFET from Magnachip Semiconductor
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Description:40 V Automotive-Qualified Logic Level N-Channel Trench MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
112 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 175 Degree C
Package:
PDFN33
Industry:
Automotive
Applications:
Switching applications, Motor drive systems
more info
PJQ4439EP-AU_R2_002A1 Image
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PANJIT Semiconductor - PJQ4439EP-AU_R2_002A1

Automotive Qualified MOSFET from PANJIT Semiconductor
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Description:Automotive Qualified P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-9 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
31.2 milli-ohm
Gate Source Voltage:
25 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN3333-8L
Industry:
Automotive
Applications:
Automotive
more info
G3R160MT17J Image
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GeneSiC Semiconductor - G3R160MT17J

Automotive Qualified MOSFET from GeneSiC Semiconductor
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Description:1700 V, 9 to 18 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 to 18 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
160 to 321 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
145 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, EV fast charging, SMPS, UPS, Auxil...
more info
5SFG 0980B12000x Image
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Hitachi - 5SFG 0980B12000x

Automotive Qualified MOSFET from Hitachi
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Description:1200 V SiC MOSFET for Automotive Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
980 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
1.9 milli-ohm
Gate Source Voltage:
15 V
Temperature operating range:
-40 to 175 degree C
Industry:
Automotive
Applications:
main drive train in xEVs, e-trucks, e-buses, tract...
more info
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Sanken Electric - MLD685D

Automotive Qualified MOSFET from Sanken Electric
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Description:60 V, -85 to 85 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-85 to 85 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
4 to 4.7 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO3P-3L
Industry:
Industrial, Commercial, Automotive
Applications:
Electric power steering, High current switching
more info
KFJ4B0421ZL Image
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Nuvoton Technology - KFJ4B0421ZL

Automotive Qualified MOSFET from Nuvoton Technology
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Description:AEC-Q101-Qualified P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.2 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
74 milli-ohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
1.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
CSP
Industry:
Commercial, Industrial, Automotive
Applications:
1.2 x 1.2 x 0.1 mm
more info
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