Industrial MOSFETs

5939 Industrial MOSFETs from 33 Manufacturers meet your specification.

Industrial MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Industry : Industrial
Description:60 V N-Channel Trench FET MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0 to 373 A
Drain Source Breakdown Voltage:
0 to 60 V
Drain Source Resistance:
0.00092 to 0.00115 milliohm
Gate Source Voltage:
0 to 20 V
Power Dissipation:
233 to 333 W
Temperature operating range:
-55 to 175 degrees C
Package:
D2PAK (TO-263)
Industry:
Industrial
more info
Description:80 V N-Channel Trench FET Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
299 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.2 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
333 W
Temperature operating range:
-55 to +175 degrees C
Package:
D2PAK (TO-263)
Industry:
Industrial
Applications:
Synchronous rectification, Or-ing, motor drive con...
more info
Description:105 V N-Channel Enhancement MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
105 V
Drain Source Resistance:
21.5 to 40.0 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
1.5 to 100 W
Package:
DPAK (TO-252)
Industry:
Industrial
Applications:
load switches, synchronous rectification, general ...
more info
Description:100 V N-Channel Enhancement MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Continous Drain Current:
37 to 366 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
1.3 to 2.0 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.8 to 375 W
Temperature operating range:
-55 to 175 ÂșC
Package:
PG-HSOG-8-1
Industry:
Industrial
Applications:
Industrial
more info
Description:650 V N-Channel Enhancement Mode SiC Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
120 to 168 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
86 W
Temperature operating range:
-40 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial
Applications:
Solar inverters, DC/DC converters, Switch Mode Pow...
more info
Description:25 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
20 to 55 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
1.9 to 3.4 milliohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
2.1 to 11 W
Temperature operating range:
-55 to 150 degree C
Industry:
Industrial
Applications:
Robots and Drones, Wireless Charging, Industrial S...
more info
Description:30 V N-Channel Enhancement MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
16.5 to 44 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.4 to 4.6 milliohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
2.1 to 11 W
Temperature operating range:
-55 to 150 degree C
Industry:
Industrial
Applications:
Charger, Consumer appliances, Consumer Electronics...
more info
Description:600 V N-Channel Enhancement MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
20 to 35 A
Drain Source Breakdown Voltage:
600 to 700 V
Drain Source Resistance:
86 to 110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
357 W
Temperature operating range:
-55 to 150 degree C
Package:
DFN8x8-4L
Industry:
Industrial
Applications:
PFC and PWM stages of Server, Telecom, Industrial,...
more info
Description:24 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
24 V
Drain Source Resistance:
12 to 37 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Industry:
Industrial, Commercial
Applications:
Lithium-ion Battery Protection
more info
Description:20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
6.1 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
29 to 100 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.9 W
Temperature operating range:
150 Degree C
Industry:
Industrial, Commercial
Applications:
Lithium-ion Battery Protection
more info

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