Military Grade MOSFETs

1381 Military Grade MOSFETs from 8 Manufacturers meet your specification.

Military Grade MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Industry : Military
Description:-30 to 30 V, 5.1 nC, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Technology:
Silicon
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-1.4 to 1.6 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
96 to 403 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Package:
SOT-363
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Power Management Switch Applications, High-Speed S...
more info
Description:-20 to 30 V, 6.7 nC, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Technology:
Silicon
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
-20 to 30 V
Drain Source Resistance:
30 to 157 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.8 W
Package:
TSOP6F
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Power Management Switches
more info
Description:20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.18 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1500 to 20000 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.2 W
Package:
SOT-363
Industry:
Aerospace, Industrial, Medical, Military
Applications:
High-Speed Switching Applications, Analog Switchin...
more info
Description:-60 V, 19 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-8 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
80 to 130 milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
27 W
Package:
DPAK
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
Description:-40 V, 172 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-90 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
3.4 to 6 milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
180 W
Package:
DPAK
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
57 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
33 to 40 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
360 W
Temperature operating range:
150 Degree C
Package:
TO-247-4L
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Power Supplies
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
54 to 65 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
270 W
Temperature operating range:
150 Degree C
Package:
TO-247
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Power Supplies
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
51 to 65 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
270 W
Temperature operating range:
150 Degree C
Package:
TOLL
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Power Supplies
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
54 to 65 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
270 W
Temperature operating range:
150 Degree C
Package:
TO-247-4L
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Power Supplies
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
75 to 90 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
150 Degree C
Package:
TO-220
Industry:
Aerospace, Industrial, Medical, Military
Applications:
Switching Power Supplies
more info

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