Space Qualified MOSFETs

354 Space Qualified MOSFETs from 5 Manufacturers meet your specification.

Space Qualified MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Industry : Space
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
92 to 110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO–257AA
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:-100 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-18 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
200 to 230 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
55 to 65 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.17 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5000 to 9000 milliohm
Gate Source Voltage:
-0.3 to 15 V
Power Dissipation:
312.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3
Industry:
Space, Industrial, Commercial
Applications:
Ideally Suited For Power Supply Circuits, Switchin...
more info
Description:200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
140 to 180 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-66
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:-100 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.4 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
60 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 175 Degree C
Package:
SMD
Industry:
Space, Industrial, Commercial
Applications:
Designed For Fast Switching Applications, Aerospac...
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
72 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD.5
Industry:
Space, Military
more info
Description:1000 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
2000 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
198 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:100 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
300 milliohm
Gate Source Voltage:
-18 to 18 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-257
Industry:
Space, Military
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.43 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
1200 to 12000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info

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