MOSFETs

130 MOSFETs from 2 Manufacturers meet your specification.
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  • Package Type : Chassis Mount
  • Manufacturers : Infineon Technologies, Littelfuse
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
52.9 to 114 milliohm
Gate Source Voltage:
-10 to 23 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 125 Degree C
Industry:
Industrial, Commercial
Applications:
High-frequency switching application, DC/DC conver...
more info
Description:-500 V, 205 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-40 A
Drain Source Breakdown Voltage:
-500 V
Drain Source Resistance:
230 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
890 W
Temperature operating range:
-55 to 150 Degree C
Package:
miniBLOC, SOT-227
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:-100 V, 240 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-170 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
14 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
890 W
Temperature operating range:
-55 to 150 Degree C
Package:
miniBLOC, SOT-227
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:-600 V, 196 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-32 A
Drain Source Breakdown Voltage:
-600 V
Drain Source Resistance:
350 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
890 W
Temperature operating range:
-55 to 150 Degree C
Package:
miniBLOC, SOT-227
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:-200 V, 205 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-90 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
44 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
890 W
Temperature operating range:
-55 to 150 Degree C
Package:
miniBLOC
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:-100 V, 740 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-210 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
7.5 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
830 W
Temperature operating range:
-55 to 150 Degree C
Package:
miniBLOC
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
7.5 to 11 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
200 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
5.63 to 8.25 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
22.5 to 33 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial, Automotive
Applications:
Welding, DC charger for EV, DC/DC converter, High ...
more info
Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
11.3 to 16.5 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
3-level-applications, High Frequency Switching app...
more info

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