MOSFETs - Surface Mount

12219 MOSFETs from 49 Manufacturers meet your specification.
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  • Package Type : Surface Mount
Description:80 V Automotive Qualified Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
274 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.3 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
219 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8-53
Industry:
Automotive
Applications:
General automotive applications
more info
Description:600 V Power MOSFET for SMPS Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
51 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
74 milli-ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
500 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK
Industry:
Artificial Intelligence, Commercial, Industrial
Applications:
Server and telecom power supplies, Switch mode pow...
more info
Description:600 V Automotive Qualified N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
99 milli-ohm
Gate Source Voltage:
30 V
Power Dissipation:
179 W
Temperature operating range:
-55 to 150 Degree C
Package:
H²PAK-2
Industry:
Automotive
Applications:
High efficiency switching applications
more info
Description:AEC-Q101 Qualified P-Channel Enhancement Mode MOSFET
Transistor Polarity:
P-Channel
Continous Drain Current:
-6 A
Drain Source Breakdown Voltage:
-500 V
Drain Source Resistance:
4.2 ohms
Gate Source Voltage:
20 V
Power Dissipation:
58 W
Applications:
High-side switches, Push-pull amplifiers, DC chopp...
more info
Description:100 V N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
197 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN
Industry:
Commercial, Industrial
Applications:
Telecom, Solar, DC-DC
more info
Description:-20 V, 5.1 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
63 to 182 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
2.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
HUSON
Industry:
Commercial, Industrial
more info
Description:600 V Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
980 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
9.1 W
Temperature operating range:
-55 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
Switching applications
more info
Description:60 V Automotive Qualified N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
8.1 to 15 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
46 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFN-8
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Power switches (High S...
more info
Description:750 V N-Channel Enhancement Mode SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
5.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1153 W
Temperature operating range:
-55 to 175 Degree C
Package:
MO-229
Applications:
Solid state relays and circuit-breakers, Line rect...
more info
Description:Automotive Qualified N-Channel Split Gate Trench MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
15 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
180 W
Temperature operating range:
-55 to 175 Degree C
Package:
D2-PAK
Industry:
Automotive, Industrial
more info

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