MOSFETs - Through Hole

5433 MOSFETs from 51 Manufacturers meet your specification.
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  • Package Type : Through Hole
Description:1200 V N-Channel SiC MOSFET for SMPS Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
183 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-3L
Industry:
Electric Vehicle, Industrial
Applications:
E-vehicle charging infrastructure, Photovoltaic in...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
42 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 to 110 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
230 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4L
Industry:
Industrial, Commercial
Applications:
Switch Mode Power Supplies, UPS, Solar string inve...
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.43 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
1200 to 12000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:600 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
90 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
1135 W
Temperature operating range:
-55 to 150 Degree C
Package:
T-MAX
Industry:
Commercial, Military
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
200 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.5 to 3.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
260 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Consumer electronic power supply, Isolated DC-DC C...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.4 to 4.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
220 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Power switching application, Hard switched and hig...
more info
Description:150 V, 120 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
6.2 to 7.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
312 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial, Automotive
Applications:
Power Drives of E-bike (E-Vehicles), DC/DC convert...
more info
Description:600 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
130 to 150 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
86 W
Temperature operating range:
-55 to 150 Degree C
Package:
FTO-220AG
Industry:
Commercial, Industrial
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27.6 to 43.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
62 to 160 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
305 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
Power Factor Correction, Server Power Supplies, Te...
more info
Description:1200 V SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
65 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 milli-ohm
Gate Source Voltage:
-8 to 22 V
Power Dissipation:
278 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247
Applications:
EV Charging Stations, Solar Inverter, Battery Char...
more info

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