N-Channel MOSFETs

14297 N-Channel MOSFETs from 50 Manufacturers meet your specification.

N-Channel MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Transistor Polarity : N-Channel
Description:1700 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
250 A
Drain Source Breakdown Voltage:
1700 V
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
1350 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High-Power Switching, Motor Controllers (including...
more info
Description:80 V Automotive Qualified Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
274 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.3 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
219 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8-53
Industry:
Automotive
Applications:
General automotive applications
more info
Description:80 V Symmetric Dual N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
19 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
56.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAIR 3 x 3FS
Applications:
Synchronous buck, Half bridge, POL, Telecom DC/DC
more info
Description:600 V Automotive Qualified N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
99 milli-ohm
Gate Source Voltage:
30 V
Power Dissipation:
179 W
Temperature operating range:
-55 to 150 Degree C
Package:
H²PAK-2
Industry:
Automotive
Applications:
High efficiency switching applications
more info
Description:1200 V 3-Phase SiC MOSFET for Inverter Applications
Types of MOSFET:
N-Channel Depletion Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
550 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.53 milli-ohm
Temperature operating range:
-40 to 125 Degree C
Industry:
Commercial, Industrial
Applications:
Inverter Applications
more info
Description:1200 V N-Channel SiC MOSFET for SMPS Applications
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
183 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-3L
Industry:
Electric Vehicle, Industrial
Applications:
E-vehicle charging infrastructure, Photovoltaic in...
more info
Description:100 V N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
197 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN
Industry:
Commercial, Industrial
Applications:
Telecom, Solar, DC-DC
more info
Description:600 V Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
980 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
9.1 W
Temperature operating range:
-55 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
Switching applications
more info
Description:AEC-Q100 Qualified N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
370 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.67 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
200 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFNW5
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Switching power suppli...
more info
Description:AEC-Q101 Qualified SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
20 milli-ohm
Power Dissipation:
429 W
Industry:
Automotive
Applications:
EV high-power DC-DC converters, EV charging system...
more info

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