AEC-Q100 Qualified MOSFETs

330 AEC-Q100 Qualified MOSFETs from 3 manufacturers meet your specification.

AEC-Q100 Qualified MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Qualification : AEC-Q100
Description:1200 V Automotive-Grade SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 to 34 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
84 to 100 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
106 to 211 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-HDSOP-22-3
Industry:
Automotive, Industrial, Commercial
Applications:
On-board charger, DC/DC converter, Auxiliary drive...
more info
Description:-6 to 6 V, 0.7 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.63 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
400 to 1500 milliohm
Gate Source Voltage:
-6 to 6 V
Power Dissipation:
0.46 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT363
Industry:
Automotive, Commercial, Industrial
Applications:
Battery Operated Systems and Solid-State Relays, D...
more info
Description:-20 to 20 V, 6.6 to 13.6 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.7 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
25 to 65 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerDI3333-8 (SWP)
Applications:
General Purpose Interfacing Switch, Power Manageme...
more info
Description:Automotive Qualified SiC Trench Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
205 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
8.7 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
882 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO263-7
Industry:
Automotive
Applications:
On-board charger, DC/DC converter, Auxiliary drive...
more info
Description:-6 to 6 V, 0.7 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
400 to 1300 milliohm
Gate Source Voltage:
-6 to 6 V
Power Dissipation:
0.32 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT523
Industry:
Automotive, Commercial, Industrial
Applications:
DC-DC Converters, Load Switch, Power Management Fu...
more info
Description:-20 to 20 V, 10.9 to 22 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
20 to 38 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.03 W
Temperature operating range:
-55 to 150 Degree C
Package:
U-DFN2020-6
Applications:
DC-DC Converters, Power Management Functions, Load...
more info
Description:-25 to 25 V, 17.4 to 34 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10.4 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
10.7 to 25 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:-20 to 20 V, , P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.7 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
200 to 450 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC59
more info
Description:-25 to 25 V, 25 to 46 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-19.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
8000 to 18000 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerDI3333-8 (SWP)
Applications:
General Purpose Interfacing Switch, Power Manageme...
more info
Description:-10 to 10 V, 75 to 164 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-90 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
5000 to 8000 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
2.76 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerDI5060-8
Industry:
Automotive, Commercial, Industrial
Applications:
Load Switch, Power Management Functions
more info

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  • Qualification : AEC-Q100

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