AEC-Q101 Qualified MOSFETs

3505 AEC-Q101 Qualified MOSFETs from 19 Manufacturers meet your specification.

AEC-Q101 Qualified MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Qualification : AEC-Q101
Description:automotive-grade Polar P-Channel Power MOSFET
Transistor Polarity:
P-Channel
Drain Source Breakdown Voltage:
-500 V
Drain Source Resistance:
4.2 ohms
Gate Source Voltage:
20 V
more info
Description:AEC-Q100 Qualified N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
370 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.67 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
200 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFNW5
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Switching power suppli...
more info
Description:AEC-Q101 Qualified SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
20 milli-ohm
Power Dissipation:
429 W
Industry:
Automotive
Applications:
EV high-power DC-DC converters, EV charging system...
more info
Description:AEC-Q101 Qualified N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
300 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
1.55 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
375 W
Temperature operating range:
-55 to 175 Degree C
Package:
TOLL
Industry:
Automotive, Industrial
Applications:
Automotive and Industrial Applications
more info
Description:150 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
6 to 7.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
320 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263(D2-PAK)
Industry:
Automotive
Applications:
DC/DC Converter, Ideal for high-frequency switchin...
more info
Description:1200 V SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
65 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 milli-ohm
Gate Source Voltage:
-8 to 22 V
Power Dissipation:
278 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247
Applications:
EV Charging Stations, Solar Inverter, Battery Char...
more info
Description:Automotive Qualified High-Voltage CoolMOS MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Continous Drain Current:
136 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.017 ohms
Gate Source Voltage:
30 V
Power Dissipation:
694 W
Industry:
Automotive, Industrial
more info
Description:-20 to 20 V, 2.7 to 5.8 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
22.9 to 43 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
24 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5 (SO-8FL)
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Switching power suppli...
more info
Description:Automotive Qualified N-Channel SiC Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
97.5 milli-ohm
Power Dissipation:
235 W
Industry:
Automotive
Applications:
EV charging systems, High voltage DC-DC converters...
more info
Description:750 V, N-Channel Enhancement Mode SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
46 to 64 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
23 to 50 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
278 W
Temperature operating range:
-55 to 175 Degree C
Package:
D2PAK-7L
Industry:
Automotive, Industrial, Commercial
Applications:
EV charging, PV inverters, Switch mode power suppl...
more info

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