AEC-Q101 Qualified MOSFETs

3556 AEC-Q101 Qualified MOSFETs from 23 Manufacturers meet your specification.

AEC-Q101 Qualified MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Qualification : AEC-Q101
Description:Automotive-Qualified P-Channel Enhancement Mode MOSFET
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-20 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
18.7 milli-ohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 175 Degree C
Industry:
Automotive
Applications:
Automotive, Switching Voltage Regulators, DC-DC Co...
more info
Description:80 V Automotive Qualified Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
274 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.3 milli-ohm
Gate Source Voltage:
20 V
Power Dissipation:
219 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8-53
Industry:
Automotive
Applications:
General automotive applications
more info
Description:600 V Automotive Qualified N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
99 milli-ohm
Gate Source Voltage:
30 V
Power Dissipation:
179 W
Temperature operating range:
-55 to 150 Degree C
Package:
H²PAK-2
Industry:
Automotive
Applications:
High efficiency switching applications
more info
Description:AEC-Q101 Qualified P-Channel Enhancement Mode MOSFET
Transistor Polarity:
P-Channel
Continous Drain Current:
-6 A
Drain Source Breakdown Voltage:
-500 V
Drain Source Resistance:
4.2 ohms
Gate Source Voltage:
20 V
Power Dissipation:
58 W
Applications:
High-side switches, Push-pull amplifiers, DC chopp...
more info
Description:AEC-Q101 Qualified SiC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
20 milli-ohm
Power Dissipation:
429 W
Industry:
Automotive
Applications:
EV high-power DC-DC converters, EV charging system...
more info
Description:40 V Automotive-Qualified Logic Level N-Channel Trench MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
112 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 175 Degree C
Package:
PDFN33
Industry:
Automotive
Applications:
Switching applications, Motor drive systems
more info
Description:Automotive Qualified P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-9 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
31.2 milli-ohm
Gate Source Voltage:
25 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN3333-8L
Industry:
Automotive
Applications:
Automotive
more info
Description:1200 V Automotive-Qualified Silicon Carbide MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
65 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 milli-ohm
Gate Source Voltage:
-8 to 22 V
Power Dissipation:
278 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247
Applications:
EV Charging Stations, Solar Inverter, Battery Char...
more info
Description:AEC-Q101-Qualified P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.2 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
74 milli-ohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
1.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
CSP
Industry:
Commercial, Industrial, Automotive
Applications:
1.2 x 1.2 x 0.1 mm
more info
Description:Automotive Qualified N-Channel SiC Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
97.5 milli-ohm
Power Dissipation:
235 W
Industry:
Automotive
Applications:
EV charging systems, High voltage DC-DC converters...
more info

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