AEC-Q101 Qualified MOSFETs

2676 AEC-Q101 Qualified MOSFETs from 17 Manufacturers meet your specification.

AEC-Q101 Qualified MOSFETs from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Qualification : AEC-Q101
Description:-30 to 30 V, 40 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.2 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
1500 to 1800 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
D2PAK
Industry:
Automotive
Applications:
Switching applications
more info
Description:-30 to 30 V, 3.4 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
4300 to 5000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
Description:-30 to 30 V, 18 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.2 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
5600 to 6800 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
90 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Industry:
Automotive
Applications:
Switching applications
more info
Description:-30 to 30 V, 9.6 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
950 to 1250 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Industry:
Automotive
Applications:
Switching applications
more info
Description:- 25 to 25 V, 121 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
66 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
37 to 42 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
446 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Automotive
Applications:
Switching applications
more info
Description:- 25 to 25 V, 98 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
37 to 42 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
390 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Automotive
Applications:
Switching applications
more info
Description:- 25 to 25 V, 203 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
69 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
24 to 32 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
450 W
Temperature operating range:
0 to 150 Degree C
Package:
TO-247
Industry:
Automotive
Applications:
Switching applications
more info
Description:- 25 to 25 V, 46 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
28 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
90 to 110 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
284 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 long leads
Industry:
Automotive
Applications:
Switching applications
more info
Description:- 25 to 25 V, 52.6 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
37 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
83 to 97 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
320 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 long leads
Industry:
Automotive
Applications:
Switching applications
more info
Description:- 25 to 25 V, 54.4 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
42 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
68 to 82 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
347 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 long leads
Industry:
Automotive
Applications:
Switching applications
more info

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